1H41 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

gd243

Contextual Info: KM29N32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

1N914 ITT

Abstract: s0103a 1k4148 S0103 SB101B 1N4154 1N444 1N914 K150 1N444A
Contextual Info: I T T CORP/ I T T CMPNTS 41E T> Bi 4b ô 2b û 4 D0014D4 Ö H IT O T* o 3 - o q SILICON DIODES General P urpose and S w itc h in g D iode s in DO-35 Package & DO-34 Package Tjs* Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­

1k27a

Abstract: K4242 k424 1K41 1h44 1K413 1H445
Contextual Info: devices TOLL FREE NUMBER 800-777-3960 T - o i ' ù t silicon diodes c o n t’d M u dw n f u k C um it p » CMrfèfrt T iff • UK56 8 a 150 IX « » 1.0 1 M * IM m t » w K4M H\62A »M 2M 1.0 1.0 i.o 5 2 5 2 40 0) is 5 l:o 200 HO N 4U *M H « 100 1:3 100

ZENER 18- 2 5t

Abstract: in4099-in4135 IN4117 diode zener s4 zener 5t 18 IN4116 IN4624 IN4101 IN4614 IN4622
Contextual Info: T0 0 Q 3 7 Ö 4TE D INTERNATIONAL SEMICOND 0 0 0 0 0 2 ^ bOl « I S E M 1N4614-1N4627 and 1N4099-1N4135 In te rn a tio n a l S em icon d uctor, In c - 400 mW low noise MECHANICAL CHARACTERISTICS Silicon zener diodes FEATURES MAXIMUM RATINGS • Zener voltage 1.8 to 100 V

Contextual Info: • 1 N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX AND JANTXV • LOW CURRENT OPERATION AT 250 n A 1N4099 thru 1N4135 and 1 N4099-1 thru 1N4135-1 • LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED -1

1h41

Contextual Info: 1H1THRU 1H8 HIGH EFFICIENCY RECTIFIERS Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES R-1 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 High speed switching for high efficiency Low reverse leakage

61a17

Abstract: E11AB BFE 81A
Contextual Info: 123456789 1 2ABBCD91BCEFE9ECBE1 9 1 92DBB9 1 BB9BCAE9 716351B7B7978916789ABC91871787BA81 977E1 81 8A1 D !1 "71 981 BAE799ABF1 71 6351 91 79871 A1 #B81 1 7B$AB"8E71 977E1D !1$7%B791A1EA919789&71 7"#771 81

Contextual Info: 1H1 THRU 1H8 高效整流二极管 High Efficient Rectifier •外形尺寸和印记 Features ●Io 1.0A ●VRRM 50V-1000V ● 耐正向浪涌电流能力高 ●High surge current capability ■用途 Outline Dimensions and Mark R-1 .130 3.30 .118(3.00) 1.0(25.4)

Contextual Info: 1H1-1H8 High Efficiency Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.0 A Features R-1 Diffused junction Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case:JEDEC R-1,molded plastic Polarity: Color band denotes cathode

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

Contextual Info: M IL -C -83723, Series II Connectors The United States Air Force specification, MIL-C-83723, USAF Series II, reflects a vastly upgraded, hi-rel version of the MIL-C-5015 type connectors. These connectors are suited for a variety of applications from commercial/industrial

1H4154

Abstract: 1N4242 1N4087 1N4147
Contextual Info: INTEX/ SEflITRONICS CORP S7E D • MòbìEMb □□0030A T discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 silicon diodes cont'd Maximum Peak Reverse Voltage volts Type Maximum Forward Voltage (volts) Forward Current (mA) 1N4009 1N4087 35

EBC91

Abstract: BA871
Contextual Info: 12345657 1 7 1 9E979AF8FCE7 71 61 91 71 87791 77B1 A1 6789ABC91 61 !"C1 A1 EBAEA8BA""7B91 1 A8E#1 9#77E1 D$%1 E!#!"79F1 71 61 !91 !8C1 7!&B791 A1 71 635'1 &1 B7 &E7(1 81 EA91 C1 

I1N4148-1

Abstract: MR 4011 hall IC 44E 11N4148-1 1N414S-1 ic 4081 pin diagram 1N914/1N4148 AD3247 1N4148-1 JANS zc 5094
Contextual Info: MIL SPECS 44E □ □□ □1 55 J> □ □ 3 5 M b cî 1 • MILS The documentation and process conversion \ measures necessary to comply with this | revision shall be completed b y ^ , INCH POUND MIL-S-19500/116J 23 Julv 1992 SUPERSEDING MI L- S - 1 9 5 0 0 / 1 1 6 H

HP7601

Abstract: HP 7611 HP 7601 8 pin IC 7601 M/icl 7601 pinout 320 cfl circuit diagram hcpl7611 HP 2601 optocoupler hp 6n137 CSA22
Contextual Info: m HEW LETT PACKARD CMOS/TTL Compatible, Low Input Current, High Speed, High CMR Optocoupler Technical Data HCPL-7601 HCPL-7611 F eatu res A pplications • Low Input Current Version of HCPL-2601/11 and 6N137 • Wide Input Current Range: Ip s 2 mA to 10 mA

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

IN4625

Abstract: IN4703 1n4100 die IN4110 IN4114 1N4705 SHARP 20 WZ 51 IN4102 1N4678 1N4679
Contextual Info: 1 T- /A /3 SEMICONDUCTORS INC OTE D | ôl3bt.S0 DGQ05S1 4 | Low Level Zener Diodes T h e s e low level z e n e r diodes a re d e s i g n e d for use at c u r r e n t lev els as low as 5 0 ua. They f e a t u r e sharp knees, low lea kag e, low im p e d an c e and low noise. The

ftt-10a

Abstract: FTT-10 echelon IMIT thermostat nv16 D2-3372 2H41 FTT-10 078-0156-01F 1h41 NV10
Contextual Info: LonWorks Communication Option Module for VTAC 7 Drives M/N 2LW3000 Instruction Manual D2-3498 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1h41

Contextual Info: BL GALAXY ELECTRICAL 1H1- 1H8 VOLTAGE RANGE: 50 - 1000 V CURRENT: 1.0 A HIGH EFFICIENCY RECTIFIER FEATURES Diffused junction Low forward voltage drop High current capability High reliability High surge current capability R-1 MECHANICAL DATA Case:JEDEC R-1,molded plastic

IN3599

Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
Contextual Info: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0