D07 15 DIODE Search Results

diode D07-15

Abstract: D07 15 d07-15 diode d07-15 diode D07-15 04 d0715 diode D07-15 30 fast recovery diode 1500V diode erd07-15
Contextual Info: ERD07 1.5A (1300V to 1500V / 1.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. 30 MIN. Features Most suitable for color T.V. damper Marking High voltage by mesa design High reliability Color code : White Applications D07- 15 51 Abridged type name

D07 15

Abstract: d07 15 58
Contextual Info: DIODES ZENER DIODES BY ASCENDING Vz GLASS PACKAGE C o n tin u e d TYPE V z @ lz TOL VOLTS ±VZ NO M INAL % Zz @ l z lz TEST CURRENT ohms mA MAX /iA •r @ Vr T.C. MAX @ VOLTS %/°C Package 1N964B 13 5 9.50 13 .10 @ 9.9 +.079 D0-7 1N964B JAN 13 5 9.50 13

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

lN34A

Abstract: Germanium itt
Contextual Info: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap

SS321

Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package

ta 8659 n

Abstract: DO-213AA
Contextual Info: Zener Regulator Diodes Micmsemi iÿiwIiÿfcÉSi JANTX1N6327US JANTXV1N6327 JANTXV1N6327US 1N5243A 1N5243A D07 1N5243B 1N5243B (D07) MLL5243B MLL5243B-1 1N6003B 1N6003C 1N6003D 1N6003A MLL5533B ZEN MLL5533B-1 MLL4107 MLL4107-1 1N5244A 1N5244A (D07) 1N5244B

IN3599

Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
Contextual Info: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

A114D

Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
Contextual Info: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)

964B

Abstract: LL964B 04 6269
Contextual Info: Zener Regulator Diodes Type Mil Spec Data P o w er S h e e t ID <W Vz : V) Izt 1 (mA) Zzt Z zk <n) <m VR i To i. i I i M ic ro s e m i I P a c k a g e D iv is io n | O u tlin e “ P art N u m b e r Microsemi (V) [(+/-%) 1N759 S cottsd ale D O -35 STD 5256

DIODE SW-05

Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts pRV If !f s m VF Irr 109 Ge Gen Purp, Fast Switch D07 91 100 0.2 0.5 1 - 110MP Ge Gen Purp, AFC, Matched Diode Pair D07 91 40

common anode schottky to220

Abstract: diode d07 anode common fast recovery diode c 92 M - 02 DIODE 3a ultra fast diode D041 SE 40 RECTIFIER Super matched pair 519 SOT23 anode common fast recovery diode dual
Contextual Info: DIODES & RECTIFIERS GENERAL PURPOSE NTE Type No. Material Description and Application Case Style Dlag. No. Maximum Peak Reverse Voltage Volts Maximum Average Forward Current (Amps) Max Peak Surge Forward Current (Amps) Maximum Forward Voltage Drop {Volts)

sm 4205

Abstract: JANTX1N6331 1N5249A DO-35 1N6006B
Contextual Info: Zener Regulator Diodes Micmsemi I . P artN uirber ZEN JANTX1N6330US JANTXV1N6330 JANTXV1N6330US 1N5248A 1N5248A D 07 1N5248B 1N5248B (D07) MLL5248B MLL5248B-1 1N6006B 1N6Q06C 1N6006D 1N6006A MLL4112 MLL4112-1 MLL5S38B MLL5538B-1 1N5249A 1N5249A (D07) 1N5249B

diode D07-15 54

Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 - AUGUST 1992 • Designed to Reduce Reflection Noise • Repetitive Peak Forward Current. . . 300 mA • 8-Bit Array Structure Suited for Bus-Oriented Systems SC PACKAGE TOP VIEW D01 D02

S1 DIODE schottky

Abstract: SN74F1056
Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085 – AUGUST 1992 • • • SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems D01

S1 DIODE schottky

Abstract: D07 15 SN74F1056
Contextual Info: SN74F1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDFS085A – AUGUST 1992 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

Contextual Info: Zener Regulator Diodes Microsemi I Microsemi Division Mil I Data Power W Spec- Sheet ID Package Outline Type STD 4197 0.5 15 SM 12606 0.5 12607 0.5 I Vz (V) izt imA) - i I Part Number Zzt Zzk (n) (n) 5 42 600 15 0.25 100 15 0.25 100 0.05 ' ' . I VR (V) Toi.

Contextual Info: SCHOTTKY DIODE ARRAY SDA24 ISSUE 3 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA24 S chottky Barrier Diode A rra y is designed to reduce reflection noise on high speed parallel data lines. • Reduced re fle c tio n noise • R e p e titive peak fo rw a rd c u rre n t 2 00m A

D11413

Abstract: diode d07 49
Contextual Info: SCHOTTKY DIODE ARRAY IS S U E 3 - JA N U A R Y 1998 DEVICE DESCRIPTION FEATURES The S D A 2 4 Schottky Barrier D iode Array is d e sign e d to reduce reflection noise on high speed parallel data lines. • Re d uced reflection n o ise • Repetitive peak forw a rd current 200m A

IN821

Abstract: IN823 in825 IN829 Diode Zener a15 ZR82V10 IN32I-829A ZR823/20 1N827 Zener Diodes 6.2 V
Contextual Info: SEM ITRO N IN D U S TR IES LTD IN82I-82 M3E T> ñiaTññT DOGGlbT ñ • SLCB SERIES Zener Reference Diodes 6V2 and 6V55 Volts Temperature Compensated APPLICATIONS ■ Semitron's ‘ZR’ range of silicon voltage references are designed and tested to provide an economical and stable

Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

SDLS019

Contextual Info: SN74S1056 8-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY SDLS019B – APRIL 1990 – REVISED JULY 1997 D D D SC PACKAGE TOP VIEW Designed to Reduce Reflection Noise Repetitive Peak Forward Current 300 mA 8-Bit Array Structure Suited for Bus-Oriented Systems

Contextual Info: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA

Contextual Info: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused