CHIP DIE TRANSISTOR Search Results

Contextual Info: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils

Contextual Info: TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils

transistor B 1184

Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 urn Die topology Page 1.500 0.600 SIPC08P20 SIPC08P10 250 250 - 50 0.030 0.035 0.055 0.055 0.070 0.070 0.100 0.100 SIPC20AN05 SIPC20AN05L

Contextual Info: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT PNP SMALL SIGNAL TRANSISTOR DIE NES4403C SURFACE MOUNT PNP SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils

chip die npn transistor

Contextual Info: Back to Bipolar Small Signal TECHNICAL DATA .023F GEOMETRY SURFACE MOUNT NPN SMALL SIGNAL TRANSISTOR DIE NES4401C SURFACE MOUNT NPN SMALL-SIGNAL TRANSISTOR DIE 1. Chip size.… 23 x 23 mils ± 2 mils 2. Chip thickness.… 10 ? 1.5 mils

Contextual Info: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:

PVAPOX

Contextual Info: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate

C0073

Abstract: f740
Contextual Info: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM

5N10E

Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183

transistor IRF730

Abstract: IRF730 TESTING
Contextual Info: I SCS-THOMSON •[LIOTMIg IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x1 56 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A

Contextual Info: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

Contextual Info: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source

GS 669

Abstract: MC008
Contextual Info: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u

sgsp301

Contextual Info: SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: 52x53 mils • METALLIZATION: Al Top Back Au /C r /NI /Au • BACKSIDE THICKNESS: 6100 Â 16 ± 2 mils • DIE THICKNESS: P-Vapox • PASSIVATION: • BONDING PAD SIZE:

IRF540

Abstract: IRF540CHIP
Contextual Info: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

transistor b 1185

Abstract: transistor B 1184 SIPC36AN10 SIPC25AN20 SIPC36AN05
Contextual Info: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Power Transistor Dice Die type Recommended source bond wire diameter1 |im Die topology Page 0.018 SIPC36AN05 500 x 2 PH 1185 ^ D S m a x ) ^ D S |o n )m a x V Q 50 100 0.045 SIPC36AN10 500 PH 1185 200 0.120

Contextual Info: [Z T SGS-THOMSON ^7#» IÄiM i[L[Hg7[M» gS IRF620 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 110x110 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source

BUZ21

Abstract: c0074
Contextual Info: SGS-THOMSON HUKêirMDÊi BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A

transistor C 639 W

Contextual Info: SGS-THOMSON •LieîWWÊ BUZ11 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 17 0x1 70 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A 16 ± 2 mils

IRF540

Abstract: IRF540CHIP
Contextual Info: / T T SGS-THOMSON ^TÆ„ MfflimitgTTOMOgS IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 7 0 x 1 7 0 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE THIC KNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: f Z 7 SGS-THOMSON MTH40N06 CHIP Hö»lllLI giriS [iülO(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u