180X220 Search Results

Contextual Info: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

C0073

Abstract: f740
Contextual Info: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

transistor IRF740

Abstract: irf740 transistor IRF740
Contextual Info: 3QE I D D 7 ciS c1 53 7 O Q 3Q m O fl • S G S-THOMSON SGS-THOMSON ' "~p3Q ^ 3 I[LiraMO gS IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A

1.2 Micron CMOS Process Family

Abstract: CMOS GATE ARRAYs
Contextual Info: High Reliability Fast CMOS Gate Arrays U N IV E R S A L S E M IC O N D U C T O R INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable

vexta

Abstract: mje 3001 RESISTOR BF 0207 BF243 BF 184 transistor NPN/NF 034 BF249 VAR10 bf345 BETA-240
Contextual Info: Semi-Custom & Custom Solutions Calogic designs and manufactures Semi-Custom and Custom Bipolar Junction Isolated Jl and Dielectrically isolated (Dl) products SPICE models, layout, DRC and ERC are available. These processes are executed in our own state of the art FAB

IPC-SM-780

Abstract: VN20NSP VN20N VN20SP
Contextual Info: APPLICATION NOTE  PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Todaythere is a great need for a true high power surface mount package. This power package was designed

MOSFET Termination Structure

Contextual Info: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands

Contextual Info: High Reliability Fast CMOS Gate Arrays UNIVERSAL SEMICONDUCTOR INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • • • • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable

Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Jen: 495 739-09-95, 644-41-29 BeKTopHbie HHBepTopbi TOSHIBA cepMM VFS11 CO B C T p o e H H b IM C e T e B b IM $ M H b T p O M npMMeHaroTca flna riMTaHM^ Tpex#a3Hbix flBMraieneM nepeMeHHoro TOKa. MHBepTopw ocHOBaHH Ha npMHU,Mne ynpaBneHMA BeKTopoM MarnMTHoro nona 6e3

Contextual Info: , . , Universal Semiconduc tot HIGH RELIABILITY FAST CMOS GATE arrays FEATURES : ISO-2/ISO-3/ISO-5 GATE ARRAY DESCRIPTION . The ISO 2 /3 /5 series o f silicon gate CMOS arrays are high perform ance fam ilies o f eleven arrays each w ifh co m p le xity ranging from 100 to 2 4 0 0 equivalent gates and a m axim um

d 526 0 6J

Contextual Info: Æ T SGS-THOMSON * 7/. APPLICATION NOTE PLASTIC PACKAGES FOR POWER DISCRETES AND ICs 1.BRIEF OVERVIEW OF TECHNOLOGY The plastic package of a power chip serves four main functions: i Electrical interconnection between the silicon chip and the external circuit;

sgs mosfet

Abstract: buz11 application note FZJ 101
Contextual Info: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands

pMOS NAND GATE

Abstract: A540B ISO-5
Contextual Info: UNIVERSAL SEMICONDUCTORS HE D ] “=131,0341 ODGQG4S 3 | T - «¿3.- //- 0 e] High Reliability Fast CMOS Gate Arrays UNIVERSAL SGMICONDUCTOR INC. FEATURES: • • • • • • • • •

TO220S - TO-220 Heatsink Small - Aluminium

Abstract: IPC-SM-780 "Intelligent Power Devices" VN20NSP IPC-SM-785 VN20SP
Contextual Info: APPLICATION NOTE PowerSO-10TM: A NEW SURFACE MOUNT POWER PACKAGE by A. Ehnert, V. Sukumar and J. Diot ABSTRACT A new surface mount power package is introduced in this paper. Today there is a great need for a true high power surface mount package. This power package was designed