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ADLINK Technology Inc


ADLINK Technology Inc eUPG Carrier Board,170x170mm(mini-ITX) Modules Accessories eUPG Carrier Board,170x170mm(mini-ITX)/Type6/1INTEL I211/2USB/1PCIE/1PCIEx4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	eUPG Carrier Board,170x170mm(mini-ITX)					1 $706.20 10 $666.30 100 $666.30 1000 $666.30 10000 $666.30	Get Quote

170X170 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRF540 Abstract: IRF540CHIP IRF540 application Contextual Info: 30E D m 7 ^ 5 3 7 00303.35 S G S -T H O M S O N R • _ S G S-THOMSON IlL iM M » IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS:	OCR Scan	irf540 170x170 47x51 15x18 +2irf540chip irf540 application	PDF
IRF540 Abstract: IRF540CHIP Contextual Info: SGS-THOMSON itl ¥»HD S IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 170x170 mils METALLIZATION: Top Al Back Au/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:	OCR Scan	irf540 170x170 15x18 mc-0075 +1irf540chip	PDF
MOSFET Termination Structure Contextual Info: rz7 SGS-THOMSON ^ 7 Mm [ j ^ 0 [ K ] Q i [ L [ l © i r [ Ë ] W 0© S A P P L IC A T IO N N O T E HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET-transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	stvhd90 mosfet termination structure	PDF
HD965 Abstract: 2SD965 transistor 2sd965 Contextual Info: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 对应国外型号 2SD965 HD965 █ 芯片简介 █ 芯片图芯片尺寸：4 英寸（100mm）芯片代码：C089AJ-00-XXX 芯片厚度：240±20µm 管芯尺寸：890x890µm 2 焊位尺寸：B 极 230×230µm；E 极 170×170µm	Original	2sd965 hd965 100mm c089aj-00-xxx +210aic transistor 2sd965	PDF
Contextual Info: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)	OCR Scan	2n3738 2n5010-15 500-lk 2n5092 +6spt5502 spt6502 2n4300 2n5152 2n4150 2n3996-9	PDF
sgs mosfet Abstract: buz11 application note FZJ 101 Contextual Info: rZ J *> 7# . S C S -T H O M S O N l«BËl5i i [ L i e ï » H 0 g i APPLICATION NOTE HIGH DENSITY POWER MOSFETS Fig. 1 - SGS POWER MOSFET structure INTRODUCTION POWER MOSFET'transistor are fabricated using VLSI technology. A simple chip contains thousands	OCR Scan	stvhd90 sgs mosfet buz11 application note fzj 101	PDF
M/TNC-75 Contextual Info: Cobham Antenna Systems Microwave Antennas Specialist Antenna Design and Manufacture CATALOGUE 2012 The most important thing we build is trust DEFENCE SECURITY ANTENNAS ANTENNAS SATELLITE COMMUNICATION ANTENNAS COMMERCIAL ANTENNAS Cobham Antenna Systems Microwave Antennas - Newmarket	Original	link16 m/tnc-75	PDF