156X156 Search Results

BUZ32

Abstract: T-39
Contextual Info: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:

Contextual Info: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

PVAPOX

Contextual Info: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate

buz21

Abstract: transistor 643
Contextual Info: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils

Contextual Info: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source

Contextual Info: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:

Contextual Info: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

Contextual Info: 3 GE » _ _ • 7 = 1 2 ^ 2 3 7 Ü03D120 2 ■ [ Z J S GS-THOMSON 'T '-3 ,C M > 6 s-thomson/ [^D(g^(Q)g[Lg(g¥^(Q)^D S_ BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al

ic 74151

Abstract: 82C54 oki oki 82c54 oki cross MSM92RB01 msm 32X32 oki msm32
Contextual Info: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|xm Sea of Gates and Customer Structured Arrays D E SC R IP TIO N Oki's second-generation 0.5|am ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer

Contextual Info: P200 -18/Ud STP210 - 18/Ud STP190 - 18/Ud 210 Watt Maximum Power SOLAR PANEL Features • High conversion efficiency based on leading innovative photovoltaic technologies • High reliability with guaranteed +/-3% power output tolerance, ensuring return on investment

LH 1560

Abstract: st 0560 032X0 MSM10R
Contextual Info: ClkSkew0_5.ANcov Page 1 Tuesday, October 10, 1995 5:43 PM APPLICATION NOTE O K I A S I C P R O D U C T S 0.5µm Technology Clock Skew Management October 1994 ClkSkew0_5.ANbod Page 1 Tuesday, October 10, 1995 5:43 PM –––––––––––––––––––––––––––––––––––––––––––––––––– • 0.5µ m Technology Clock Skew Management ■

30r0080

Abstract: PQFP 32X32 MSM ARRAY
Contextual Info: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|im Sea of Gates and Customer Structured Arrays DESCRIPTION Oki's second-generation 0.5|im ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer