PVAPOX Search Results

BUZ32

Abstract: T-39
Contextual Info: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:

Contextual Info: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: 3QE » • 7^237 OQBQIMb 1 SCS-THOMSON * 15 ELEgTOMS L_.“ SGSP341 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 5 2 x5 3 mils METALLIZATION: Top Al Back A u/C r/N I/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: 4ÔE D 0 1 3 3 1 0 7 GGDD42D 7 b l H S N L B G137 chip family The G 137 chip family is an NPN bipolar multi-epitaxial planar transistor intended for applications requiring fast switching, low saturation power devices. SEMELAB LT]> 'î- 3 5 'O l • UP TO 35 AMPS

G872A

Abstract: G672A semefab BUL48B BUL49A BUL49B G172 G272A G372A G572A
Contextual Info: Ô1331Ô7 ODODHIS 3TH « SM l- B MÛE D SEM EFABI SEMELAB LTD DIFFUSION DISTRIBUTED BASE TECHNOLOGY DIE DESIGNED AND DIFFUSED BY SEMEFAB G172 chip family The G172 chip family is an NPN bipolar multiepitaxial planar transistor using SEMEFAB’S new ADVANCED DISTRIBUTED BASE TECHNOLOGY

TOP SIDE MARKING M27C512

Contextual Info: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

M27C512 SGS-THOMSON

Abstract: M2201 ST93C46
Contextual Info: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8

transistor IRF730

Abstract: IRF730 TESTING
Contextual Info: I SCS-THOMSON •[LIOTMIg IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 15 6x1 56 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 6100 A

SGSP477

Contextual Info: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â

Contextual Info: / = T SGS-THOMSON [*^ MttJ(êir[EMD(g§ * 7 . # IRF740 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

VDMOS

Abstract: VDMOS DEVICE
Contextual Info: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS

4000 series CMOS Logic levels 18 - 24v

Abstract: PVAPOX
Contextual Info: GENERAL AND APPLICATION INFORMATION INTRODUCING HS-C2 MOS High Speed The rapid advances recently m ade in silicon-gate CM OS technology have lead to the introduction of a logic fam ily that sets new and much higher stand­ ards of performance. This fam ily called HS-C2MOS*, exhibits a greatly

C0073

Abstract: f740
Contextual Info: {Z71T,» SGS-THOMSON SKaOfflQIlLlKg'u’M O e i IR F 740 CHIP * N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 180x220 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

74hc family

Abstract: 4000B-family MIL-STD-883 Method 1014 RAW MATERIAL INSPECTION persons responsible
Contextual Info: R E L IA B IL IT Y R E P O R T THE PRODUCT TECHNOLOGY The sharp improvement in performance of the 74HC family, in comparison to the standard 4000B family, is mainly due to the 1980’s technological progress, and to a systematic layout philosophy, high-speed-oriented.

30a bipolar

Abstract: PVAPOX
Contextual Info: BIPOLAR TRANSISTORS Multi-epitaxial Mesa GLASS THERMAL OXIDE Al P-VAPOX N + P+ P N - N N+ Features Icm up to 30A Vceo up to 700V yvon1SEC3 More than 55 silicon lines Variety of package options

Z8671

Abstract: 74L5373 7 chip computer zilog z8671 TDA 12110 SP 8324 LCD INTERFACING USING 8051 ASSEMBLING LANGUAGE ZILOG Z8681-12 Z8671 PS Z8-BASIC TDA 2060
Contextual Info: ZS MICROCOMPUTER FAMILY The Z8 2K ROM single chip microcomputer produced by SGS using NMOS technology Automatic electrical test of a VLSI device in the SGS Agrate facility Application board using Z8671 tiny Basic microcomputer CODleDls' Page SGS: an introduction

TV horizontal Deflection Systems

Abstract: TRANSISTOR REPLACEMENT GUIDE an363 TV horizontal Deflection Systems 25 transistor horizontal section tv Horizontal Deflection Switching Transistors TV horizontal Deflection Systems mosfet CRT TV electron gun horizontal section in crt television TV flyback transformer
Contextual Info: APPLICATION NOTE TRANSISTORS FOR HORIZONTAL DEFLECTION IN TELEVISIONS AND MONITORS by V. Sukumar ABSTRACT The low cost and good performance of high voltage bipolar transistors have meant that these devices remain as the designers first choice in horizontal

Contextual Info: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

transistor IRF520

Abstract: IRF520 mos die 312c IRF52
Contextual Info: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:

BUZ11

Contextual Info: 30E D 37 0030116 4 T 3 A-1 I S G S-THOMSON S G S -T H O M S O N RiflD ®ilLI gTr[S@IR!IO©i B U Z 11 C H IP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: 17 0x1 70 mils Al A u /C r/N i/A u

Contextual Info: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM

Contextual Info: fZ 7 *7# SUO g»[i[Lll(gra RiO(gi GS-THOMSON SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 5 2 x 5 3 mils Al A u /C r/N i/A u

Contextual Info: rZ 7 ^TÆ, SGS-THOMSON Mffi iLlI gre©iO(gS IRF151 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 221 x221 mils Al A u /C r/N i/A u

IRF540

Abstract: IRF540CHIP
Contextual Info: / T T SGS-THOMSON ^TÆ„ MfflimitgTTOMOgS IRF540 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 7 0 x 1 7 0 mils M ETALLIZATIO N: Top Back Al A u /C r /N i/A u BACKSIDE THICKNESS: DIE THIC KNESS: PASSIVATION: BONDING PAD SIZE: