VDMOS Search Results

p281

Abstract: P28-1 TRANSISTOR P281
Contextual Info: polyfet rf devices P281 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2246

Contextual Info: polyfet rf devices F2246 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF134

Contextual Info: polyfet rf devices PRF134 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

F2211

Contextual Info: polyfet rf devices F2211 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

F2248

Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

PRF136

Contextual Info: polyfet rf devices PRF136 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI,

Contextual Info: polyfet rf devices LR301 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices L2721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices L2711 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

l9651

Abstract: MO-166 sy 166
Contextual Info: L9651 SMART QUAD SWITCH • Modified VDMOS Power Stage UDSBR > 80V ■ RDSON < 500 mOhm (Tj = 25°C) ■ CMOS Compatible Inputs Enable Input (Reset) Outputs Capable of up to 2.2 Amperes Outputs Internally Clamped at 70V for Fast Inductive Load Switch Off

Contextual Info: polyfet rf devices SQ742 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices L8721P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

optical switch 2x1

Abstract: cd photo diode ocm240 Photo MOS Relay OCM200 OCM201 OCM220 OCM221 OCM241 201 photo
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay GENERAL DESCRIPTION The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

P123

Contextual Info: polyfet rf devices P123 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

LX723

Contextual Info: polyfet rf devices LX723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

blv730

Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET "Power MOSFET" POWER MOSFET 400V power mosfet
Contextual Info: BLV730 N-channel Enhancement Mode Power MOSFET • 抗雪崩冲击能力强 BVDSS 400V • 高速开关 RDS ON 1.0Ω Ω • 驱动简单 ID 5.5A 产品介绍 BLV730 是上海贝岭采用目前先进的工艺和设计技术， 自行开发的 400V 5.5A N 沟 VDMOS， 适合于各类高

L2701

Contextual Info: polyfet rf devices L2701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

mosfet 40a 200v

Abstract: BLV40N20 MOSFET 200v 20A n.channel 1160a
Contextual Info: BLV40N20 Preliminary SEP. 2009 N-channel Enhancement Mode Power MOSFET • 低导通电阻 BVDSS 200V • 低反向传输电容 RDS ON 50mΩ Ω • 驱动简单 ID 40A 产品介绍 200V 40A 大功率 VDMOS 器件，导通电阻小驱动简单，适合 PDP 驱动电路使用

LB421

Abstract: LDMOS
Contextual Info: polyfet rf devices LB421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

lb501

Contextual Info: polyfet rf devices LB501 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

bi-directional switches FET

Abstract: til 431 ocm240 OCM200 OCM201 OCM220 OCM221 OCM241
Contextual Info: O K I electronic components OCM 2X 0, 2X1 SERIES Bidirectional Optical MOS Relay G EN ER A L D E S C R IP T IO N The OCM2XO and OCM2X1 Series are bidirectional AC optical MOS relays. The input portion is a GaAs infrared light emitting diode. The output portion uses a combination of silicon VDMOS

BLV108

Abstract: MOSFET
Contextual Info: BLV108 N 沟纵向 MOSFET 描述: 描述: N 沟增强型 VDMOS，高速开关，无二次击穿 产品应用： 电话机电路 继电器电路 驱动电路等 工作条件 T=25℃ (T=25℃ 符号 参数 极限值 单位 VDSS 漏源电压 200 V VGSS 栅源电压

SD723

Abstract: VDMOS
Contextual Info: polyfet rf devices SD723 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.