F2248 Search Results
F2248 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| F2248 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 35.2KB | 2 |
F2248 Price and Stock
RFMi SF2248DSignal Conditioning 3V 314.45 MHz 50 Ohms SMD/SMT SM-3838-8 |
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SF2248D |
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RFMi SF2248ESignal Conditioning 50 Ohms 3 V 314.7 MHz to 315.3 MHz 1.52 |
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SF2248E |
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RFMi SF2248E-1Signal Conditioning 3V 314.45 MHz 50 Ohms SMD/SMT SM-3030-6 |
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SF2248E-1 |
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Caplugs VCF-224-8 BLKConduit Fittings & Accessories VCF-224-8 PVCBLK100 |
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VCF-224-8 BLK |
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Caplugs VCF-224-8 BRNConduit Fittings & Accessories VCF-224-8 PVCBRN200 |
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VCF-224-8 BRN |
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F2248 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
F2248Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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F2248 F2248 | |
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Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
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F2248 | |
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Contextual Info: p o ly fe t r f d e v ic e s F2248 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F2248 1110Avenida 72mDG1 |