LB401 Search Results

Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB200

Abstract: amidon BN-61-202 c12 ph zener diode
Contextual Info: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200

Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

TB207

Abstract: UT85 coax LB401 NJM78L08A UT85-15 UT85-50 120PF
Contextual Info: 15 30 45 60 75 90 105 30 60 90 120 1 1 2 2 4 P in in W a tts 5 6 7 8 3 4 5 6 P in in W a tts Efficiency @ 65W= 31% 7 TB207 LB401 Freq=750MHz Vds=28Vdc Idq=1.6A 3 Efficiency @ 65W = 43% Linear @12W P1dB=65W 8 TB207 LB401 Freq=500MHz Vds=28Vdc Idq=1.6A 9 9 10

LB401

Abstract: TRANSISTOR 1300
Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

at 8515

Abstract: LB401 TB200 20AWG Polyfet RF Devices 20-1000Mhz
Contextual Info: Polyfet RF Devices TB200#LB401 Vds=28Vdc Idq=1.0A Gain Flatness/Efficiency 20 100 Gain 90 15 80 10 60 Efficiency 50 Pout fixed at 60W 5 40 30 100 200 300 400 500 Freq in MHz 600 700 800 900 20 1000 Eff in % Gain in dB 70 Polyfet RF Devices TB200#1 LB401 Freq=20MHz Vds=28Vdc Idq=1.0A

LB401

Abstract: LDMOS TRANSISTOR 1300
Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

166A

Abstract: TB166A LQ801 FT50A-43 LB401 10nF R20 10K ohm TB166 C33-C38 30MHz to 512MHz
Contextual Info: Polyfet RF Devices TB-166A LQ801-> LB401 Gain/Efficiency vs Freq; Vds=28Vdc Idq=1.2A 30 100 27 90 24 80 Gain 21 70 15 Pout fixed at 60W 60 Efficiency 12 50 9 40 6 30 3 40 80 120 160 200 240 280 Freq in MHz 320 360 400 440 480 20 520 Eff in % Gain in dB 18

Contextual Info: polyfet rf devices LB401 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE

LK141

Abstract: 60W VHF TV RF amplifier
Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

MGCF21

Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount

TB191

Abstract: LB401 NJM78L08A UT85-50 47PF
Contextual Info: T B 1 9 1 P o u t /G a i n v s P i n f = 8 5 0 M H z V d s = 2 8 V d c I d q = . 8 A 140 15.0 120 14.0 P1dB=100W 100 Pout 13.0 80 12.0 60 11.0 Gain 40 E fficiency@ 1 0 0 W = 5 5 % 10.0 20 9.0 3 6 9 12 15 Pin in Watts T B 1 9 1 G a in/E f f i c i e n c y v s F r e q

rf push pull mosfet power amplifier

Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30

40374

Abstract: amd29510 L64012 TDC1010 carry select adder p1-5k LSP10 MSP 3410 D
Contextual Info: L64010 L64011 L64012 16-Bit HCMOS Muttiplier-Accumulators LSI LOGIC LSI Logic Corporation 1551 McCarthy Blvd Milpitas CA 95035 408.433.8000 Telex 172153 h • 005783 Description The L64010 replicates industry standard functionality and pinout for a 64-pin DIP package. It includes a full