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P-1.5KE100C
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Littelfuse
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TVS - Diodes, Circuit Protection, TVS DIODE 85.5VWM 143.85VC AXL |
Original |
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6 |
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P-1.5KE51A
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Littelfuse
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TVS - Diodes, Circuit Protection, TVS DIODE 43.6VWM 70.1VC AXIAL |
Original |
PDF
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6 |
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P-1.5KE51C
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Littelfuse
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TVS - Diodes, Circuit Protection, TVS DIODE 43.6VWM 73.61VC AXIAL |
Original |
PDF
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6 |
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P-1.5KE51CA
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Littelfuse
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TVS - Diodes, Circuit Protection, TVS DIODE 43.6VWM 70.1VC AXIAL |
Original |
PDF
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6 |
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P-15KP66CA
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Littelfuse
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TVS - Diodes, Circuit Protection, TVS DIODE 66VWM 35VC P600 |
Original |
PDF
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1 |
GPP15K
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SUNMATE electronic Co., LTD
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1.5 A axial leaded silicon rectifier diode in DO-15 package with 50 to 1000 V reverse voltage range, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125 °C. |
Original |
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EGP15K
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SUNMATE electronic Co., LTD
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Glass passivated fast efficient rectifier diodes in DO-15 package, with 50 to 1000V blocking voltage, 1.5A average rectified current, 50A non-repetitive surge current, low forward voltage drop, and reverse recovery time from 50ns, suitable for high reliability applications. |
Original |
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NCE40P15K
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -40V drain-source voltage, -15A continuous drain current, 35mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications. |
Original |
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RGP15K
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SUNMATE electronic Co., LTD
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RGP15A-RGP15M fast recovery rectifier diodes feature 1.5 A average forward current, 50-1000 V peak reverse voltage, low forward voltage drop of 1.3 V at 1.5 A, and reverse recovery time from 150 to 500 ns in a DO-15 package. |
Original |
PDF
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NCE55P15K
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NCEPOWER
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P-Channel Enhancement Mode MOSFET with -55V drain-source voltage, -15A continuous drain current, and 60mΩ typical RDS(ON) at VGS=-10V, designed using trench technology for low gate charge and high efficiency in power switching applications. |
Original |
PDF
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GP15K
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SUNMATE electronic Co., LTD
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1.5A axial leaded silicon rectifier diode with 50 to 1000V reverse voltage range, low forward voltage drop, high surge current capability, and operating temperature from -65 to +125°C.1.5 A axial leaded silicon rectifier diode in DO-15 package with 50 to 1000 V reverse voltage range, low forward voltage drop, high surge current capability, and operating temperature from -65 to +125 °C.1.5 A axial leaded silicon rectifier diode in DO-15 package with 50 to 1000 V reverse voltage range, low forward voltage drop, high surge current capability, and operating temperature from -65 to +125 °C. |
Original |
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GPP15K
