SGSP301 Search Results

Contextual Info: 3D E 3> • 7^537 OOE'îW b ■ ^ 3 » ^ - CT7 S G S-THOMSON S C S - T H O M S O - N id E g lT M M K g S S G S P 3 0 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS R DS on SGSP301 100 V 1.4 Î2 Id 2.0 A HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: fZ 7 *7# SUO g»[i[Lll(gra RiO(gi GS-THOMSON SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 5 2 x 5 3 mils Al A u /C r/N i/A u

sgsp301

Contextual Info: SGS-THOMSON ¡y SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: 52x53 mils • METALLIZATION: Al Top Back Au /C r /NI /Au • BACKSIDE THICKNESS: 6100 Â 16 ± 2 mils • DIE THICKNESS: P-Vapox • PASSIVATION: • BONDING PAD SIZE:

Transistor B C 458

Abstract: sgsp301
Contextual Info: / = 7 SGS-THOMSON ^7Æ» KlD g»ll[L[l(gre ROD(gi SGSP301 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP301 100 V • • • • ^DS(on 1.4 fi 2.0 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE APPLICATIONS ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE

Contextual Info: 3DE D • 7^2^37 0030144 S G S -T H O M S O N 5 ■ s « i LEg¥^(QM(gS ( s- t h o k o h _ _ SGSP301 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

sgsp301

Contextual Info: Æ 7 SGS-THOM SON SGSP301 R jflO M [l[UI TrM O gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on Id SGSP301 100 V 1.4 n 2.0 A • HIGH SPEED SW ITCHING APPLICATIO NS • G EN E R AL PURPOSE APPLICATIO NS • ULTR A FAST SW ITCHING

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

SGSP321

Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Contextual Info: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*

substitu bipolar transistors

Contextual Info: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

ISOWATT220

Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00

IRFZ42 equivalent

Abstract: tdk P2616 P2616 BUX12 UC3840
Contextual Info: / = 7 SGS-THOMSON * 7 * , . 6 [L tlC T tM M ! A PPLICA TIO N NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control.

bow94c

Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

sgsp311

Abstract: substitu bipolar transistors sgsp331 sgsp531 10a 400v bipolar transistor
Contextual Info: r z 7 ^ 7 § S G S - m o M S O N M g [M & (I(g T[M iiO (gS TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These

ISOWATT-220

Abstract: mtp15n05 BU210A ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00

siemens r10 core

Abstract: P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840
Contextual Info: F= 7 SCS-THOMSON APPLICATION NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control. The Power switch is designed around an emitter

sgs*P381

Abstract: IRFp150 To3 package bu245a BR 1300
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50

IRF521

Abstract: SGSP461 SGSP591 IRF540 smd SGSP381 IRF540FI sgsp321 BUZ11S2FI SGSP462 t0218
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36