SGSP Search Results

Contextual Info: 3 0E J • 7*iBïi 2 3 7 _ 0 D 2 ^ b _ ' l S C S -T H O M S O N M m 'f .'Z P i - W s 6 s- TH0?si N _ i Lll(g¥IS IRDO(gi SG SP330 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^ D S (o n ) SGSP330 450 V 3n Id 3A • HIGH SPEED SWITCHING APPLICATIONS

Contextual Info: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss

Contextual Info: 3 0 e: D ¿ = 7 n 7 e! 2 ci2 3 7 Q Q 2ci c127 S C S -T H O M S O N T H T '— P ' S 0, — Vi f i T r S ^7# RjflH @ilLi gT]»lSÖÖ©i r - SGSP230 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP230 V dss 450 V ^DS(on 30 *D 2.5 A • HIGH SPEED SWITCHING APPLICATIONS

SGSP474

Contextual Info: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi

Contextual Info: 3QE D 7=12^237 D0301SD G T '^ k S G S-THOMSON SGS-THOMSON SGSP477 CHIP ¡y N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 221 x221 mils METALLIZATION: Top Al Back A u /C r/N l/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

Contextual Info: 3 0E P • 7121237 0 G 2 1 CT H 5 ■ ^ T V 2 > °M 3 / Z T S G S -T H O M S O N s G SGSP363 * J M * M ^(Q i[Li irö«n(gS_ SGSP367 S " T H M S N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 V qss 250 V 200 V ^DS(on)

Contextual Info: 3QE » • 7^237 OQBQIMb 1 SCS-THOMSON * 15 ELEgTOMS L_.“ SGSP341 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 5 2 x5 3 mils METALLIZATION: Top Al Back A u/C r/N I/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

SGSP239

Contextual Info: 3QE » • 002^33 r z z SGS-THOMSON ^7# R5ilD g[E](s i[L[i ¥^©iö(gi 5 'T g s-thohso_n_ SGSP239 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP239 VDss 500 V ^ D S (o n ) 8.5 n 1.2 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

Contextual Info: / T 7 SGS -THOMSON TÆ. [IDtgœiLiOTlôMtgS SGSP316 SGSP317 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP316 SGSP317 250 V 200 V 1.2 ß 0.75 n 5A 6 A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE

SGSP369

Abstract: SGSP364
Contextual Info: SGSP364 SGSP369 /= 7 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on *D SGSP364 SGSP369 450 V 500 V 1.5 fl 1.5 ß 5 A 5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - FOR ELECTRONIC LAMP BALLAST • ULTRA FAST SWITCHING

SGSP477

Contextual Info: SGS-THOMSON m SGSP477 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM • DIE SIZE: • METALLIZATION: Top Back 221 x 221 mils Al - max 7 mils M s P-Vapox 5 6 x 4 3 mils 18 x 18 mils c T 16 ± 2 mils • RECOMMENDED WIRE BONDING: Gate 6100 Â

SGSP577

Contextual Info: / = 7 SGS-THOMSON SGSP577 * J Æ « * [ M [ l[ L i T T [ M ) * § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP577 Voss 200 V ^DS(on) 0.17 Q Id 20 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH CURRENT - FOR TELECOMM POWER SUPPLIES • ULTRA FAST SWITCHING

diode RZ 593

Abstract: SGSP579
Contextual Info: r^J A 7f» SGS-THOMSON M È lS m iIlg T O M O È S SG SP579 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Dss ^D S on SGSP579 500 V 0.7 n 9 A • HIGH SPEED SW ITCHING APPLICATIO NS • HIGH V O L T A G E -9 A FOR UP TO 3 5 0 W S M P S • ULTRA FAST SW ITCHING - FOR OPERATION

SGSP362

Abstract: transistor ph-18 schematic diagram UPS
Contextual Info: SGSP361 SGSP362 / T T SGS-THOM SON ^ 7 # . RS10 glSi lilLI(S?[S©HO(Si N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 fi Id 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS

SGSP471

Contextual Info: Æ 7 SGS-THOMSON SGSP471 SGSP472 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on SGSP471 SGSP472 100 V 80 V 0.075 ß 0.05 n 30 A 35 A • • • • HIGH SPEED SWITCHING APPLICATIONS 8 0 - 100 VOLTS - FOR DC/DC CONVERTERS HIGH CURRENT > 1V DROP AT 20A

SGSP319

Contextual Info: r=Z SGS-THOMSON ^7# llD g»[l[L(l(g™iD(êi SGSP319 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^ D S (o n SGSP319 500 V 3.8 n 2.8 A HIGH SPEED SWITCHING APPLICATIONS 500V - HIGH VOLTAGE FOR SMPS ULTRA FAST SWITCHING

lsd 513

Abstract: SGSP361 SGSP362
Contextual Info: r Z 7 SG S-TtiO M SO N ^7# MœimHÊÏÏCMDÊS SGSP361 SGSP362 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on 'd SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 U 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS

SGSP311

Abstract: schematic diagram 110 V STEPPER MOTOR DRIVE
Contextual Info: / = 7 SGS-THOMSON * JÆ • ilO g (0 [lL[E(g?œMQ i SGSP311 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 ' V DSS ^DS(on) •d 100 V 0.3 fl 11 A • HIGH SPEED SWITCHING APPLICATIONS • 100V FOR DC/DC CONVERTERS • RATED FOR UNCLAMPED INDUCTIVE

Contextual Info: SGSP491 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)40 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

Contextual Info: SGSP141 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V) I(D) Max. (A)0.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

Contextual Info: SGSP351 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)

Contextual Info: SGSP156 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)350 V(BR)GSS (V) I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)

SP571

Abstract: diode sg 71 diode sg 47 sgsp571 sp 571 diode sg 55 diode c142 SG-47 diode C144 e s j P472
Contextual Info: S G S-THOMSON 07E 1> j TTETEB? OOlT'iai 4 ï 73C 17418 J}_ 7 Z 3 J - / 3 SGSP47Í/P472¿| |SGSP571/F572| l\l-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field