SGSP36 Search Results

Contextual Info: 3QE { = J *w Æ u D _WÊ_ 7 ^ 5 3 ? S C S -T H O M S O N Q Ü S W S s fi 1 • ' " p 3 < :M 3 > S’ ,H # " S M H D ^ © [l[L i© ¥ ^ © iD g i S G S P 3 6 1 S G S P 3 6 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP361 SGSP362 V qss

Contextual Info: 3 0E P • 7121237 0 G 2 1 CT H 5 ■ ^ T V 2 > °M 3 / Z T S G S -T H O M S O N s G SGSP363 * J M * M ^(Q i[Li irö«n(gS_ SGSP367 S " T H M S N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 V qss 250 V 200 V ^DS(on)

SGSP369

Abstract: SGSP364
Contextual Info: SGSP364 SGSP369 /= 7 SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on *D SGSP364 SGSP369 450 V 500 V 1.5 fl 1.5 ß 5 A 5 A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - FOR ELECTRONIC LAMP BALLAST • ULTRA FAST SWITCHING

SGSP362

Abstract: transistor ph-18 schematic diagram UPS
Contextual Info: SGSP361 SGSP362 / T T SGS-THOM SON ^ 7 # . RS10 glSi lilLI(S?[S©HO(Si N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 fi Id 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS

lsd 513

Abstract: SGSP361 SGSP362
Contextual Info: r Z 7 SG S-TtiO M SO N ^7# MœimHÊÏÏCMDÊS SGSP361 SGSP362 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on 'd SGSP361 SGSP362 100 V 80 V 0.15 Q 0.1 U 18 A 22 A • • • • HIGH SPEED SWITCHING APPLICATIONS 80 - 100 VOLTS - FOR UPS APPLICATIONS

D773

Abstract: P369 diode sg 46 diode sg 69 P469 SGSP368 SGSP3B8/P369 SP369 SGSP469 sgsp468
Contextual Info: S G S -T H O M S O N SGSP368/P369 D7E D § T T ST H B ? 73C 17403 D 0D 17TQ ti û | “ SGSP468/P469 SGSP568/P569 : N_CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

SGSP363

Abstract: sgsp367
Contextual Info: SGSP363 SGSP367 r s 7 SGS-THOMSON ^ li1 siô isï®iiLi ns®i«iBei N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 v oss 250 V 200 V ^D S on •d 0.45 0 0.33 Q 10 A 12 A • HIGH SPEED SWITCHING APPLICATIONS • TELECOMMUNICATION APPLICATIONS

p367

Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
Contextual Info: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

SGSP369

Abstract: diode sg 5 ts
Contextual Info: r= Z SG S-TtiO M SO N lüítlDffl lilLi ir[M!lD gi SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS T YPE V DSS SGSP364 450 V 1.5 fi 5 A SGSP369 500 V 1.5 fi 5 A RDS(on Id • HIGH SPEED SW ITCHING APPLICATIO NS • HIGH VO LTAG E - FOR ELECTRO NIC LAM P

SGSP363

Abstract: SGSP367
Contextual Info: S 7 J MTM SCS-THOMSON sUieraò M gi SGSP363 SGSP367 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 VDSS 250 V 200 V ^DS(on) 0.45 0 0.33 Q 10 A 12 A • HIGH SPEED SWITCHING APPLICATIONS • TELECOMMUNICATION APPLICATIONS • RATED FOR UNCLAMPED INDUCTIVE

sgsp365

Abstract: sp365 SGSP465 p466 sgsp466 SGSP464 sgsp564 S 566 b P565 SGSP566
Contextual Info: S 6 S-THOHSON 0 7 E ' •• : - , SGSP364/P365/P366 SGSP464/P465/P466 ; . SG SP 56 4 /P 56 5 /P 5 6 6 73C D | 17395 HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS V ds •d l m • Ptot Tstg Tj (•) Pulse w idth lim ited b y safe operating area

SGSP369

Contextual Info: 30E D • 7^5^537 SGS-THOMSON ■[LKêTOiDÊS 003QQ05 s - S ■ T - 3 CI - 1 3 SGSP364 ” SGSP369 t h o m s o n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP364 SGSP369 VDss 450 V 500 V f*DS on 1.5 Í2 1.5 n 5 A 5 A • HIGH SPEED SWITCHING APPLICATIONS

p461

Abstract: P561 SGSP461 transistors C106 SGSP561 bv42 sgsp302
Contextual Info: S G S-TH O M SO N . ; D7E ; . 73C •* h I "■ SGSP361/P461/P561 ] ;A h SGSP302/P4B2/P562. : l , 1 j D g 17379 7^5^537 HIGH SPEED SWITCHING APPLICATIONS V DSS TO-220 SOT-93 TO-3 A B S O L U T E M A X IM U M R A T IN G S Drain-source voltage VGS = 0 Drain-gate voltage (RGS = 20KD )

IAf630

Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

SGSP369

Contextual Info: SGS-THOMSON ^ T # tm [f^ D [^ Ô i[L i(§ T r ^ (Ô )R { ]D © S T E C H N IC A L N O T E STUDY OF A MODEL FOR POWER MOSFET GATE-CHARGE INTRODUCTION The increasing interest in POWER MOSFET devi­ ces is due especially to their ability to switch po­ wer at high frequencies and the simple drive

EC35 TRANSFORMER

Abstract: SGSP369 Ferroxcube 3C8 HIGH FREQUENCY Transformer ec35 core ferroxcube Core Ferroxcube EC35-3C8 EC35 switching power AN-247 AN247 EC35-3c8
Contextual Info: APPLI CATION NO TE A 25W OFF-LINE FLYBACK SWITCHING REGULATOR INTRODUCTION This note describes a low cost switching power supply for applications requiring multiple output voltages, e.g. personal computers, instruments, etc. The discontinuous mode flyback regulator used in

SGSP321

Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Contextual Info: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*

substitu bipolar transistors

Contextual Info: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup­ plies. H.F. welding systems, industrial ovens, re­ lay drivers and other similar applications. These

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

mos Turn-off Thyristor

Abstract: SiC BJT pnp transistor 1000v BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor
Contextual Info: rZ J SCS-THOMSON ~7w m R 0 [H ]© i[L i© U É © M D © S t e c h n ic a l n o te AN INTRODUCTION TO HIMOS INTRODUCTION The structure and characteristics of HIMOS High Injection MOS devices, provide circuit designers with an INSULATED GATE BIPOLAR TRANSI­

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

8n20

Abstract: SGSP363 SEFM8N18 SEFM8N20
Contextual Info: S G S-THOtlSON 07E D | 73C 17 58 9 ^ ' •, 1 % f,ii 'v SEFM8N18 SEFMN820 SEFP8N18 ^ SEFP8N20 ; M-CHANNEL POWER MOS TRANSISTORS ABSOLUTE MAXIMUM RATINGS V qs b !g m Ptot ^ s tff T¡ 7 ^ 3 % // ! HIGH SPEED SWITCHING APPLICATIONS V js D 1 . These products are diffused multi-cell silicon gate