P367 Search Results

MC 340 transistor

Abstract: P367 tyco igbt 1200V V23990-P367-F-PM
Contextual Info: Target datasheet flow PACK 0, 1200V, 15A Version 0102 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified V23990-P367-F-PM Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung

p367

Abstract: tyco igbt 1200V p367 diode tyco igbt R120 HP1001
Contextual Info: V23990-P367-F flow PACK 0, 1200V version 0403 Maximum Ratings / Höchstzulässige Werte Parameter Transistor Inverter Transistor Wechselrichter Collector-emitter break down voltage Kollektor-Emitter-Sperrspannung DC collector current Condition 1200 V IC 17

p367

Abstract: sgsp467 P467 sgsp463 sgsp567 SGSP363 sgsp563 P3B7 ic isd 1932 SGSP367
Contextual Info: s G S-THOMSON 07E D ‘ . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 D O D iT ô ^ a 7* 3 ^ ^ fi " “1.1 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

diode sg 94

Contextual Info: Tem ic MOD200B/200C Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) ( ß ) I d (A) 200 0.11 21 Leadform Options MOD200B . MOD200C . Bent Down Bent Up N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

ais150

Contextual Info: Temic MODIOOB/IOOC Siliconix Four N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) 100 I d (A) 21 r DS(on) (Q ) 0.08 D Q Leadform Options MODIOOB . Bent Down MODIOOC . Bent Up Ò s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

IRFD 110

Abstract: IRFD 640
Contextual Info: Tem ic IRFDllO N-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)

2N7076

Contextual Info: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

P281 B01

Abstract: G187
Contextual Info: LogiCORE IP Processing System 7 v4.02a DS871 October 16, 2012 Product Specification Introduction LogiCORE IP Facts Table The Processing System 7 IP is the software interface around the Zynq Processing System. The Zynq -7000 family consists of an system-on-chip (SoC) style

Si9114DY

Abstract: Si9114DJ Si9114 Si9420DY TL431
Contextual Info: Si9114 Siliconix HighĆFrequency Switchmode Controller Features D Latched SHUTDOWN D SoftĆStart D 1.5ĆMHz Error Amp D 15Ć to 200ĆV Input Range D CurrentĆMode Control D Internal StartĆUp Circuit Description The Si9114 is a BiC/DMOS currentĆmode pulse width

2N7085

Contextual Info: 2N7085 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 100 0.075 20 TO-257AB Hermetic Package D G Case Isolated S G D S N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

2N7076

Contextual Info: 2N7076 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) 200 0.10 28 TO-254AA Hermetic Package D G Case Isolated S D S G N-Channel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol

transistor 5BM

Abstract: 100-C 2N7079
Contextual Info: T e m ic 2N7079 P-Channel Enhancement-Mode Transistor Product Summary V BR DSS(V) rnsfcm) (Ö) I d (A) -100 0.210 -1 7 TO-254AA Herm etic Package o 1 O— i I1 It Case Isolated Ô D

D469ADJ

Abstract: 105120 D469AAP/883 5962-9098301MCA D469A D469AAP
Contextual Info: T e m ic D469A Siliconix Quad High-Current Power Driver Features Applications End Products • • • • • • • • • Motor Drives • Power Supplies • dc/dc Converters • • • • • • Wide Voltage Range High Current Drive Fast Rise and Fall Tiroes

aw7 TRANSISTOR

Abstract: P449 I-CUBE iq P-033 Bus repeater p426 P-238 P122-P120 p331 TRANSISTOR P339
Contextual Info: MSX Family Data Sheet Features • SRAM-based, in-system programmable • Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output enables, 2 Global Clock inputs and Next Neighbor

SMP60N06-14

Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
Contextual Info: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

GM120BP

Abstract: resistor 60k ohm gssp gm120bp 638Bh K6R4016V1D gssp PUR50 P35-P34 DDR4 65p03
Contextual Info: June 2006 GM120BP 8-BIT MICROCONTROLLER USER’S MANUAL REVISION 0.5 GM120BP TABLE OF CONTENTS 1. PRODUCT OVERVIEW . 3 2. MEMORY ORGANIZATION . 13

hecs 450

Abstract: hecs 50 transistor w5c Liquid Rotor Resistor Starter SGCT "symmetrical gate commutated thyristor" UPS wiring how to control firing angle in thyristor SCR firing inverter circuit LMT 393 N
Contextual Info: PowerFlex 7000 Medium Voltage AC Drive Firmware Version 7.xxx Technical Data Important User Information Solid-state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application, Installation and

P521 G

Abstract: P452 p477 p520 p508 p364 p372 p421 data sheet P439 IR P116
Contextual Info: MSX532 Matrix Switch Preliminary Data Sheet Features • SRAM-based, in-system programmable • 532 Configurable I/O Ports – Individually programmable as input, output, bi-directional, or Bus Repeater mode – Control Signals per I/O port: 2 input enables, 2 output

D469ADJ

Contextual Info: T e m ic D469A Siliconix Quad High-Current Power Driver Features End Products Applications Wide Voltage Range High C urrent Drive Fast Rise and Fall Times Low Power Consumption Single Power Supply Low O utput Impedance TTL/CM OS Inputs ESD Protection • M otor Drives

P60N06

Abstract: P60N06-14 m p60n06 SMP60N06-14
Contextual Info: Tem ic SMP60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary VDS V r DS(on) (S2) I d (A ) 60 0.014 60 See lower-cost version: SU P60N06-14 D Q TQ-220AB o DRAIN connected to TAB Ô S Top View N-Channel MOSFET

TMP90PM40N

Abstract: TMP90PM40F TMP90PM40 IC TMP90PM40N, Toshiba TMP90PM
Contextual Info: TOSH IBA TMP90PM40 C M O S 8-BIT MICROCONTROLLERS TM P90PM 40N /TMP90PM40F 1. . OUTLINE A N D CHARACTERISTICS The TMP90PM40 is a system evalution LSI having a built in One-Time PROM for TMP90CM40. A programming and verification for the internal PROM is achieved by using a

SMP60N06-18

Abstract: SMP60N06 SUP50N06-18 SMP60N06-18 power mosfet SUP50N06
Contextual Info: SMP60N06-18 N-Channel Enhancement-Mode Transistor, 18-mW rDS on Product Summary VDS (V) rDS(on) (W) ID (A) 60 0.018 60 See lowerĆcost version: SUP50N06Ć18 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

transistor P479

Abstract: P521 FAIRCHILD P124 FAIRCHILD p491 p331 TRANSISTOR p372 p525 AU38 p268 "Fairchild Semiconductor" fairchild aa35
Contextual Info: Revised April 2003 MSX532 532 Port Digital Crosspoint Switch with LVTTL I/O’s General Description Features The MSX family of SRAM-based bit-oriented switching devices offer flow-through NRZ data rates of up to 150Mb/s and registered clock frequencies of up to 75MHz. The I/O