SUP60N06 Search Results

SUP60N06-12P

Abstract: SUP60N06-12P-E3 SUP60N06-12P-GE3
Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

sup60n06-18

Abstract: SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SUP60N06-12P

Abstract: SUP60N06-12P-GE3 SUP60N06-12P-E3
Contextual Info: New Product SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

SMP60N06-14

Abstract: SMP60N06 70281 SMP60N06-14 equivalent SUP60N06
Contextual Info: SMP60N06-14 N-Channel Enhancement-Mode Transistor Product Summary VDS V rDS(on) (W) ID (A) 60 0.014 60 See lowerĆcost version: SUP60N06Ć14 D TO-220AB G DRAIN connected to TAB G D S S Top View N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: SUP/SUB60N06-18 VISHAY Siliconix N-Channel 60-V D-S , 175 °C MOSFET Product Summary V(BR)DSS (V ) r DS(on) (£2) I d (A ) 60 0.018 60 TO-220AB D Q “ cT pO'N ’ ss& TO-263 G D S Top View 6 Top View s SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

sub60n06

Abstract: sup60n06-18 SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP60N06-12P

Contextual Info: SPICE Device Model SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range

sup60n06

Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

SMP60N06

Abstract: SMP60N06-14 SUP60N06-14 FH100
Contextual Info: T em ic SMP60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V o s V T D S (o n ) ( £ 2 ) I d (A ) 60 0 .0 1 4 60 See lower-cost version: SUP60N06-14 T O -2 2 Q A B o D R A IN connected to TA B

4604 mosfet

Abstract: 4604 SUP60N06-18 A 3120 MOSFET 4604 AN609
Contextual Info: SUP60N06-18_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SUP/SUB60N06-18 Siliconix N-Channel 60-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G D S Top View G D S Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUP60N06-18

Abstract: SUB60N06-18 SUB60N06
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

4013 n

Abstract: 4511 mosfet 9443 u 5601 69093 8114 AN609 SUP60N06-12P 12p mosfet 80886
Contextual Info: SUP60N06-12P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

SUP60N06-08

Abstract: SUP60N06
Contextual Info: Tem ic sii.conix_ SUP60N06-08 N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) 60 0.008 60 TO-220AB o J t DRAIN connected to TAB G D S Top View N-Channel MOSFET

SUB60N06-18

Abstract: SUP60N06-18
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

sup60n06-18

Abstract: SUB60N06-18
Contextual Info: SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional