DDR4 Search Results

DDR400

Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
Contextual Info: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM

K4H511638B-TCCC

Abstract: K4H510838B-TCCC DDR333 DDR400 K4H511638B-T
Contextual Info: DDR SDRAM 512Mb B-die x8, x16 DDR SDRAM 512Mb B-die DDR400 SDRAM Specification Revision 1.0 Rev. 1.0 June 2003 DDR SDRAM 512Mb B-die (x8, x16) DDR SDRAM 512Mb B-die Revision History Revision 0.0 (May, 2003) - First release Revision 1.0 (June 2003) - Updated DC Characteristics

DDR333

Abstract: DDR400 K4H281638E-TCCC
Contextual Info: DDR SDRAM 128Mb E-die x8, x16 DDR SDRAM 128Mb E-die DDR400 SDRAM Specification Revision 1.3 Rev. 1.3. September. 2003 DDR SDRAM 128Mb E-die (x8, x16) DDR SDRAM 128Mb E-die Revision History Revision 1.0 (February, 2003) - First release Revision 1.1 (February, 2003)

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz Clock Cycle Time (tCK2)

DDR4 pcb layout guidelines

Contextual Info: User's Guide SLUU526 – August 2011 Using the TPS51916EVM-746 Complete DDR2, DDR3, DDR3L, and DDR4 Memory Power Solution Synchronous Buck Controller, 2-A LDO, Buffered Reference The TPS51916EVM-746 evaluation module EVM allows users to evaluate the performance of the

Contextual Info: 200PIN DDR400 Unbuffered SO-DIMM 512MB With 64Mx8 CL3 TS64MSD64V4J Description Placement The TS64MSD64V4J is a 64M x 64bits Double Data Rate SDRAM high-density for DDR400. The TS64MSD64V4J consists of 8pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages and a

Contextual Info: 184PIN DDR400 Registered DIMM 512MB With 64Mx8 CL3 TS64MDR72V4J Description Placement The TS64MDR72V4J is a 64M x 72bits Double Data Rate SDRAM high-density for DDR400. The TS64MDR72V4J consists of 9pcs CMOS 64Mx8 bits Double Data Rate SDRAMs in 66 pin TSOP-II 400mil packages, 2pcs drive

Contextual Info: 184Pin DDR400 Registered DIMM 2GB with 128Mx4 CL3 TS256MDR72V4S Description Placement The TS256MDR72V4S is a 256M x 72bits Double Data Rate SDRAM high-density for DDR400. The TS256MDR72V4S consists of 36pcs CMOS 128Mx4 bits Double Data Rate SDRAMs in 60 ball FBGA packages,

NT1GD64S8HB0G

Abstract: 99127 NT1GD64S8HB0G-5T PC2700 PC3200 NT512D64S88B0G-6K
Contextual Info: NT1GD64S8HB0G / NT512D64S88B0G / NT256D64SH4B0G NT1GD72S8PB0G / NT512D72S89B0G 1GB, 512MB, 256MB, 1GB ECC and 512MB(ECC) PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 512M bit Die B device Features • 184 Dual In-Line Memory Module (DIMM)

64MX64

Abstract: DDR266 DDR333 DDR400B PC2100 PC2700 PC3200
Contextual Info: P64M648HHJ - 512MB, P64M648IGJ-512MB, P128M6416HHJ –1GB SDRAM DDR MODULE 64M, 128M X 64 DIMM Features: • • • • • • • • • • • • • 184 pin dual in-line memory modules DIMM Fast data transfer rates PC2100, PC2700, PC3200 Utilizes DDR266, DDR333 and DDR400B DDR

NT512D64S8HAAG-7K

Abstract: NT512D64S8HB1G-5T DDR400B NT512D64S8HC0G-6K NT512D64S8HABG-6 NT512D64S8HC0G-5 512mb DDR400A ddr dimm pinout NT512D64S8HAAG NT512D64S8HB1G
Contextual Info: NT512D64S8HA0G / NT512D64S8HAAG / NT512D64S8HABG NT512D64S8HB0G / NT512D64S8HB1G / NT512D64S8HC0G 512MB : 64Mb x 64, 64Mb x 72 PC3200 / PC2700 / PC2100 / PC1600 Unbuffered DDR DIMM 184-pin Unbuffered DDR DIMM Based on DDR400/333/266/200 32Mbx8 and 64Mbx8 SDRAM

Contextual Info: CBTW28DD14 14-bit bus switch/multiplexer for DDR2/DDR3/DDR4 applications Rev. 6 — 25 July 2014 Product data sheet 1. General description This 14-bit bus switch/multiplexer MUX is designed for 1.5 V or 1.8 V supply voltage operation, POD_12, SSTL_12, SSTL_135, SSTL_15 or SSTL_18 signaling and CMOS

Contextual Info: V58C2512 804/404/164 SD HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

Contextual Info: V58C2256 804/404/164 SA HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2128 804/404/164 SB HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 5B 5 6 7 DDR400 DDR400 DDR333 DDR266 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns 7ns Clock Cycle Time (tCK3)

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V58C2128 804/404/164 SE HIGH PERFORMANCE 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 4 5 6 DDR500 DDR400 DDR333 7.5 ns 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 5ns 6ns 6 ns Clock Cycle Time (tCK3) 4ns 5ns

Contextual Info: V58C2512 804/404/164 SA*I HIGH PERFORMANCE 512 Mbit DDR SDRAM 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 5 6 DDR400 DDR333 7.5 ns 7.5 ns Clock Cycle Time (tCK2.5) 6ns 6 ns Clock Cycle Time (tCK3) 5ns 6 ns 200 MHz 166 MHz

Contextual Info: V58C2256 804/404/164 SG HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns

Contextual Info: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 5D 5B 5 6 7 DDR400 DDR400 DDR400 DDR333 DDR266 Clock Cycle Time (tCK2) 5 ns 7.5 ns 7.5 ns 7.5 ns 7.5ns Clock Cycle Time (tCK2.5)

BA 5053

Contextual Info: V58C2256 804/404/164 SC HIGH PERFORMANCE 256 Mbit DDR SDRAM 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 4 BANKS X 16Mbit X 4 (404) 4 45 5D 5B 5 6 7 DDR500 DDR440 DDR400 DDR400 DDR400 DDR333 DDR266 5ns 5ns 5ns 7.5ns 7.5ns 7.5ns 7.5ns Clock Cycle Time (tCK2.5)

V58C2512

Contextual Info: V58C2512 804/404/164 SD*I 512 Mbit DDR SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 8Mbit X 16 (164) 4 5 6 75 DDR500 DDR400 DDR333 DDR266 - 6ns 6ns 7.5ns 4ns 5ns - - 250 MHz 200 MHz 166 MHz 133 MHz Clock Cycle Time (tCK2.5)

DDR400

Abstract: PC3200
Contextual Info: Memory Module Data Sheet L6472YC7 512MB 64M x 72-bit ECC Registered DDR400 PC3200 SPECIFICATIONS; • 512MB (64M x 72-bit) Registered DDR400 DIMM • Error Check Correction (ECC) Capability • BGA 32M x 8 (8M x 8 bit x 4 Bank/200Mhz) x Eighteen DRAM • 184-pin Dual in-line memory module with Gold Plated Contacts

datasheet DIMM DDR400 PC3200

Abstract: DDR333 DDR400 PC3200
Contextual Info: Memory Module Data Sheet T1664D46 128MB 16M x 64-bit DDR400 PC3200 SPECIFICATIONS; • 128MB (16M x 64-bit) Unbuffered DDR333 DIMM • TSOP-II 16M x 16 (4M x 16 bit x 4 Bank/200Mhz) x Four DRAM • 184-pin Dual in-line memory module with Gold Plated Contacts