SGSP311
Abstract: schematic diagram 110 V STEPPER MOTOR DRIVE
Contextual Info: / = 7 SGS-THOMSON * JÆ • ilO g (0 [lL[E(g?œMQ i SGSP311 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 ' V DSS ^DS(on) •d 100 V 0.3 fl 11 A • HIGH SPEED SWITCHING APPLICATIONS • 100V FOR DC/DC CONVERTERS • RATED FOR UNCLAMPED INDUCTIVE
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sgsp311t0-220schematic diagram 110 v stepper motor drive |
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Contextual Info: 3QE D • 7 ^ 2 3 7 ODBTÌMS S C S -T H O M S O N * J Æ , 1 ■ s 6 s"!h o k o n R a m m g iiL iiC T @ iia D s _ S G S P 3 1 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP311 Vpss 100 V ^DS on) 0.3 ß •d 11 A • HIGH SPEED SWITCHING APPLICATIONS
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sgsp311t-39-1t |
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SGSP211
Abstract: sgsp312 P512 74c74 P312 Diode D7E
Contextual Info: s G S-T H O H SO N G7E : 73C D I 1 7 3 j> 7 7121237 D DÜ 17SSQ 7 T ~-3?-/r_ SGSP211/P212 SGSP311/P312 ? SGSP511/P512 N-CHANNHL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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17ssqsgsp211/p212sgsp311/p312sgsp511/p512+10sgsp211sgsp311sgsp511sgsp212sgsp312sgsp512p51274c74p312diode d7e
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stepper motor em 464
Abstract: LSD11 stepper motor em 463 sgsp311 464 stepper motor
Contextual Info: /= 7 S G S -T H O M S O N *7Æ, lfflD g»i[Li(@'ir»R5l](gi SGSP311 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS SGSP311 100 V ^D S(on 0.3 fi 11 A • HIGH SPEED SW ITCHING APPLICATIO NS • 100V FOR DC/DC CO NVERTERS • RATED FOR UNCLAM PED INDUCTIVE
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sgsp311t0-220stepper motor em 464lsd11+2stepper motor em 463464 stepper motor
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ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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o-220isowatt220isowatt22qsth107n50+3sth10n50sthi10n50sthi10n50fi
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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p-220isowatt220o-220sthi07n50+11sthi07n50fisthi10n50sthi10n50fisgs*p381isowatt218 igbtstlt20mtp3055afisgsp381irfp453fisgsp579sgsp591
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SGSP321
Abstract: sgs*P381 SGSP381 SGSP201 MTP3055AFI STLT20 STLT20FI BUZ11S2FI SGSP591 IRF153
Contextual Info: Æ T SGS-THOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MOÊ IILIOT©R!ID gi POWER MOS @ >D Package Type V(BR DSS r DS (on) max (V) (0) (A) 60 60 60 60 60 0.15 0.15 0.15 0.13 0.08 6 7.5 7.5 8 20 ISOWATT 220 TO 220 ISOWATT 220 TO 220 TO 3 MTP3055AFI STLT20*
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mtp3055afistlt20stlt20fisgsp321+10irf153irfp153irfp153fistlt30sgsp381sgsp481sgs*p381sgsp201buz11s2fisgsp591
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substitu bipolar transistors
Contextual Info: iC T SCS-THOMSON * 7 #. 68S0 gC? liLS TO©raO©S TECHNICAL NOTE POWER MOS IN SWITCHING AN EVALUATION METHOD AND A PRACTICAL EXAMPLE INTRODUCTION POWER MOS are used in switch mode power sup plies. H.F. welding systems, industrial ovens, re lay drivers and other similar applications. These
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substitu bipolar transistors |
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324tp8n10th15n20th7n50tp4n10tp10n05irfp350fitp5n35tp5n40tp4n45tp3n40
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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sthi07n50sthi07n50fisthi10n50sthi10n50fi+11o-220isowatt22isowatt22qisowatt220mtp3055afiirf722fiirfp453fisgsp579sgsp591sgs35ma050d1sgsp382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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ot-82ot-194sgsp222sgsp201+12sgsp230sgsp239o-220sgsp358mtp15n05lstlt19sgs*p381iss 355irfp150 to3 packageirfp350fimtp3055afisgsp591
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Contextual Info: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagarpa0016str11006so41p+7pioneer pa00167 segment to bcd converter 74c915saj14174hc145tms1122ic pa0016kor 2310 transistor
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bow94c
Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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irf530fisgsp361sgsp461buz21+15buz25irf142irf542irf542fiirf152irfp152bow94cbow93csgsp591mtp3055asgsd93gsgsp381smd sj 87b0334buz10
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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o-220isowatt220sth107n50sth10n50+5sthi10n50sthi10n50fiisowatt-220mtp15n05bu210a
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12N60FI
Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90
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2sk10212sk10232sk10812sk1082+162sk11172sk11182sk11192sk11202sk11542sk115612n60fik791a4n50e2n60ek2n502sk1118 cross referencep3n90p3n60p6n60tp3055el
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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ot-82ot-194sgsp222sgsp201+10sgsp230sgsp239o-220sgsp358mtp15n05lstlt19sgs*p381irfp150 to3 packagebu245abr 1300
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8n10
Abstract: SGSP311 8n08 SEFM8N08
Contextual Info: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 SEFM8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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d01flqflsefm8n08sefm8n10sefp8n08+5300jjssgsp311c-3118n108n08
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IRF521
Abstract: SGSP461 SGSP591 IRF540 smd SGSP381 IRF540FI sgsp321 BUZ11S2FI SGSP462 t0218
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36
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irf523irf523fiirf521irf521fi+15irf533irf533fiirf531irf531fiirf543irf543fisgsp461sgsp591irf540 smdsgsp381irf540fisgsp321buz11s2fisgsp462t0218
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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sef520
Abstract: diode C238 sgsp311 sef522 SEF521 SG 2058
Contextual Info: S G S-THOMSON 0 7 E D ; 73C 17514 7 7 *3 1 r ii. . SEF520 '•J SEF521 V SEF522 SEF523 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.
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sef520sef521sef522sef523+4sef522/sef523sgsp311diode c238sg 2058
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