SGSP474
Contextual Info: 30E t • 7iai237 0030021 S ■ _ / = 7 S G S - T H O M S O N 5 T ? ' ,H t " SM S G S P 4 7 4 ^ 7 # [ÜDffi Q [E[L[i(g¥^(ó)iD(gÍ SG SP 475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 fi
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7iai237sgsp474sgsp475100khz+10q30q33
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SGSP474
Contextual Info: r^ 7 S G S -T H O M S O N # » » H H H O T M lO Ê i SG SP474 SG SP475 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on *D SGSP474 SGSP475 450 V 400 V 0.7 fi 0.55 U 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS
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sp474sp475sgsp474sgsp475+1100khz
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sgsp474
Contextual Info: SGSP474 SGSP475 Æ 7 SGS-THOMSON ^ 7 # RíflD IS Q IILll©M)RDD©Í N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) •d SGSP474 SGSP475 450 V 400 V 0.7 fl 0.55 fi 9 A 10 A • • • • HIGH SPEED SWITCHING APPLICATIONS HIGH VOLTAGE - FOR OFF-LINE SMPS
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IRF740 smd
Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36
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irf523irf523fiirf521irf521fi+16irf533irf533fiirf531irf531fiirf543irf543fiirf740 smdtsd4m350vtsd4m250vsgsp363irf740 mosfetirf540sgsp461tsd4m250irf823sgs100ma010d1
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ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30
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o-220isowatt220isowatt22qsth107n50+3sth10n50sthi10n50sthi10n50fi
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sgs*P381
Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177
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p-220isowatt220o-220sthi07n50+11sthi07n50fisthi10n50sthi10n50fisgs*p381isowatt218 igbtstlt20mtp3055afisgsp381irfp453fisgsp579sgsp591
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BUV48 SE
Abstract: SGSD00036 kkz 10
Contextual Info: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous
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sgs30ma050d1250fisgs30msgs40ta045d+5sgs400t045do-24qbuv48 sesgsd00036kkz 10
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IRF722P
Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324irf722pirf732psgsp3055irf730p1rfp450irf510sgsp312irf540fiirf522pmtp20n10
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kkz 10
Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous
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sgs30ma050d1sgs40ta045ds400t045dkkz 10+1buv48
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2sk2952sk2962sk3082sk310+162sk3112sk3122sk3132sk3192sk3202sk324tp8n10th15n20th7n50tp4n10tp10n05irfp350fitp5n35tp5n40tp4n45tp3n40
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TSD4M450V
Abstract: TSD4M250V IRF740 smd Isotop SGS100MA010D1 SGSP363 TSD4M150V IRF621 IRF621FI IRF622
Contextual Info: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100
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irfp150irfp150fisgs100ma010d1tsd4m150v+11sgs150ma010d1irf623irf623fiirf621irf621fiirf622tsd4m450vtsd4m250virf740 smdisotopsgsp363
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ISOWATT220
Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
Contextual Info: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00
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sthi07n50sthi07n50fisthi10n50sthi10n50fi+11o-220isowatt22isowatt22qisowatt220mtp3055afiirf722fiirfp453fisgsp579sgsp591sgs35ma050d1sgsp382
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sgs*P381
Abstract: ISS 355 IRFp150 To3 package IRFP350FI MTP3055AFI SGSP591 SGSP239
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ^ BR DSS (V ) 50 100 450 500 R DS(on) (max) 3 Type •d (A ) (12) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 TO-220 R DS(on) V(BR)DSS (V) 50 50 50 50 50 50 50 50 50 50 50 50 50 50
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ot-82ot-194sgsp222sgsp201+12sgsp230sgsp239o-220sgsp358mtp15n05lstlt19sgs*p381iss 355irfp150 to3 packageirfp350fimtp3055afisgsp591
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sgsp476
Abstract: P575 6V 475 diode diode sg 71 SGSP474 P475
Contextual Info: S G S-THÔHSON Q7E D T J 3 C 174357 ~D T Î3 ^ - / 3 J SGSP474/P475/P476 SGSP574/P575/P.578 N-GHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field e ffect transistors.
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sgsp474/p475/p476sgsp574/p575/p/400vot-93+10sgsp474sgsp574sgsp475sgsp575sgsp476sgsp576p5756v 475 diodediode sg 71p475
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GG 06
Abstract: VN35010
Contextual Info: MOSFETs Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) 9FS VGS(th) Min (5) Max (V) Ciss Max (F) tr Max (s) tf Max (8) Toper Max (OC) Package 5tyle N-Channel Enhancement-Type, (Co nt' d) 5 10 UFN733 2N6759 SFN333 MTM5N35
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ufn7332n6759sfn333mtm5n35+3mtp5n35vn35010gg 06
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IRF740 "direct replacement"
Abstract: irf9640 REPLACEMENT GUIDE IRF9540 replacement IRF640 irf510 2Sk350 HITACHI IRF9613 rca9213a buz11 cross reference sgsp467 fu120
Contextual Info: CROSS REFERENCE GUIDE POWER MOSFETs Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace ment Inter national Rectifier SAMSUNG Direct Replace
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irf510irf511irf512irf513+16irf520irf521irf522irf523irf610irf611irf740 "direct replacementirf9640 replacement guideirf9540 replacementirf640 irf5102sk350 hitachiirf9613rca9213abuz11 cross referencesgsp467fu120
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ISOWATT-220
Abstract: mtp15n05 BU210A ISOWATT220
Contextual Info: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00
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o-220isowatt220sth107n50sth10n50+5sthi10n50sthi10n50fiisowatt-220mtp15n05bu210a
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sgs*P381
Abstract: IRFp150 To3 package bu245a BR 1300
Contextual Info: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50
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ot-82ot-194sgsp222sgsp201+10sgsp230sgsp239o-220sgsp358mtp15n05lstlt19sgs*p381irfp150 to3 packagebu245abr 1300
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IRF740 smd
Abstract: TSD4M250V IRF6205 IRF722FI SGS BUZ32 SGSP475 IRF621 IRF621FI IRF622 IRF622FI
Contextual Info: Ä 7 SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MMiWICTraOtSS POWER MOS V BR DSS r DS (on) max @ ip Type •d max Ptot (A) c iss max (W) 9fs min (mho) 150 65 400 500 400 40 13 13 20 20 20 1.3 3000 3000 11200 11200 14000 600 (V) (0) (A) 100 100 100 100
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irfp150irfp150fisgs100ma010d1tsd4m150v+13sgs150ma010d1irf623irf623fiirf621irf621fiirf622irf740 smdtsd4m250virf6205irf722fisgs buz32sgsp475irf622fi
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7an-6466cx 2859 smd74ac14 spice6120* harrishcf4018be7028 smd transistorspice irfbc40
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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