S400T045D Search Results

kkz 10

Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO­ WER MOS will, in many applications, gradually re­ place power bipolar devices due to the numerous