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kkz 10 Abstract: BUV48 Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous	OCR Scan	SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48	PDF

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kkz 10

Abstract: BUV48
Contextual Info: Æ T SCS-THOMSON *7 # . l«lD lSÌ [l[LS!g'irM BeS TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future PO WER MOS will, in many applications, gradually re place power bipolar devices due to the numerous

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SGS30MA050D1 SGS40TA045D: S400T045D kkz 10 BUV48

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