CEIS Search Results

2SB1148

Abstract: 2SB1148A 2SD1752 2SD1752A panasonic 2SB
Contextual Info: Power Transistors 2 S 1 1 4 8 , B 2 2SB1148, 2SB1148A S B 1 1 4 8 A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching Complementary Pair w ith ‘2S D 1752, 2S D 1752A U nit I mm • Features • Low co llecto r-eim itter saturation voltage V ceisjo

2SB935

Abstract: 2SB935A
Contextual Info: Power T ransistors 2SB935, 2SB935A 2SB935, 2SB935A Silicon PNP Epitaxial Planar Type Package Dimensions Low Voltage Switching • Features • Low collector-emitter saturation voltage V ceissh • High speed switching ' • “N Type” package configuration with a cooling fin for direct soldèring

ZTX504

Abstract: BC212 BC307 BC556A BC556B BC557A BC557B BC557C BCY77A BCY77B
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS Volts Volts nA Volts Min. Max. V CEIsatl *c < hFE at IcBO Min. Min. Max. at V CB o m V CBO V CEO Dice type at llc mA Volts Volts mA Max. *b mA fr C obo Min. Max. MHz Chip geometry PF BC556A 80 65 15 30 110 220

Contextual Info: Power Transistors 2SD2151 2SD2151 Silicon NPN Epitaxial Planar Type Package D im ensions Power Sw itching • Features • L o w c o l l e c t o r - e m i t t e r s a tu r a tio n v o lta g e V ceissu • G o o d lin e a r it y o f D C c u r r e n t g a in (h Ft)

2n6700

Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA

ZTX109

Abstract: DSA2IH00224555.
Contextual Info: TABLE 5 : NPN LOW NOISE The transistors in this table are characterised for low noise, low level amplification and are ideally suited for audio pre-amplifiers as well as universal applications. Type ^CEO V BCY65EP 60 2N5209 50 Max 'c mA hFE M a x V CEIsat>

FZT690B

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT690B ISSUE 3 - OCTOBER 1995 - FE A T U R E S * * * Very low equivalent on-resistance; B CEisat 1 2 5 m il a t 2A Gain of 400 at lc =1 Amp Very low saturation voltage A PPLICA TIO N S

ZTX558

Abstract: PSA42
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors show n in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Max Type V CBO V CEO M ax V CEIsat 'c V V mA 400 400

bc558c

Abstract: BC212
Contextual Info: SEMICONDUCTOR DICE PNP SMALL SIGNAL TRANSISTORS V CBO V CEO Dice type ^CBO Min. Min. Max. at VCB hFE at V CEIsatl lc VCE at lc Volts Volts nA Volts Min. Max. mA Volts Volts mA BC556A BC556B 80 80 ZTX504 BCY77A 70 60t BCY77B 60t BCY77C BC212 BC307 60t 60 50t

Contextual Info: Digital is & 5 & m m * ss jm n CEiS : [ 755-fl3Z 79 l1B/B327B6 59/332 70360 R I ìI t «vwvì a p o H c U ' G o n tf£ £ : 51S03J 07S5-.03279233 flilffl • SensorOgpnI Iosz com

SB754

Abstract: 2SD844
Contextual Info: V u =i >PNP=SI£S[^ 2SB754 u ? ï Wf c t f X ë . n l. ÿ : I c = —7 A ftÿt • ÿ ê â Î P 'S Œ ^ 'f â ^ 'o : V cEisa t) = - 0 . 4 V ( f t * ) ( I c = - 4 A ) 1 ^ 3 u- ? : P c = 60W(Tc = 25°C) 2SD844 t n > 7' 'J 7 > ? ') tz &- V) i t „ (Ta = 25°C)

BH P58

Abstract: sot89 mark code AE ah p96 n58 sot89 sot89 mark code AA
Contextual Info: SOT89 IMPIM MEDIUM POWER TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter Type v CEIsat Max ti -E v CBO V VCEO V lc cont) mA mW FCX458 400 400 300 1500 BST 39 400 350 500 1500 P.Ot M in/M ax h Typ MHz Part Mark Code at Iq / V ce mA / Volts Volts at l c / Ib

Contextual Info: TO-237 PLASTIC PACKAGE TRANSISTORS PNP J • Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. CSA10130 1 Po 'c (A) 'cm (A) 'ceo (MA) Max ^cs (V) hFE @ <c* (mA) ^CE ^CEISAT] @ ^BE(SAT) «0«) (ns) Max CDIL Case Style

ZTX653

Abstract: ZTX749 ZTX650 ZTX751 BCX38B 100C ZTX649 ZTX651 ZTX652 ZTX750
Contextual Info: TABLE 8 : NPNiPNP HIGH PERFORMANCE TYPES These transistors offer the ultimate performance for a TO-92 style package, and are suited to audio output stages, lamp driving, general switching applications etc. Type V cbo V Max V CEIsat| Min fT P,o, hFE at Max Max

b14 smd diode

Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
Contextual Info: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

texas instruments tip34

Abstract: texas instruments tip33 TIP33C
Contextual Info: TYPES TIP33, TIP33A, TIP33B. TIP33C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS X O H m c< tj r FO R POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGN ED FOR COM PLEM ENTARY USE WITH TIP34, TIP34A, TIP34B, TIP34C • 80 W at 25° C Case Temperature

2N5227

Abstract: a5t5227
Contextual Info: TYPES 2N5227, A5T5227 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L S 731 1927, M A R C H 1973 S IL E C T t TR A N S IS TO R S ! • For Low-Level, Small-Signal, General Purpose Am plifier and Oscillator Applications • Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil

2N5685

Abstract: 2n5686
Contextual Info: TYPES 2N5685, 2N5686 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS • 300 Watts at 25° C Case Temperature • 50-A Rated Continuous Collector Current • Min f j of 2 M Hz at 10 V , 5 A TYPES 2N5685, 2 N 5686 BULLETIN NO. DL-S 7111591, DECEMBER FOR PO W ER -AM PLIFIER A N D HIGH-SPEED-SW ITCHING APPLICATIO N S

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LH516AZE

Contextual Info: S H A R JP L H5 1 6AZE 1 Contents 1 . Description 2 2. Pin Conf ¡{juration 2 3. Truth Table 2 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics .

9736D

Abstract: UDN2879W UDN-2878W-2 UDN297
Contextual Info: 2 8 7 8 2 8 7 9 v \i> QUAD H IG H -CU RRENT D AR LIN G TO N SW ITCH ES These quad Darlington arrays are designed to serve as interface between low-level logic and peripheral power devices such as sole­ noids, motors, incandescent displays, heaters, and similar loads of up

A5T4028

Abstract: purpose of IC 4027 5T4029
Contextual Info: TYPES A5T4026 TH R U A5T4029, A8T4026 TH R U A8T4029 P-N-P S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 2 0 0 2 , M A R C H 1 9 7 3 SILECTt TRANSISTORS* FOR GENERAL PURPOSE APPLICATIONS • • • High V BR CEO •■80 V Min (A5T4027, A5T4029, A8T4027, A8T4029)

Contextual Info: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power consumption - 30 mA maximum active current - 100 fiA maximum standby current • Compatible with JEDEC-standard byte-wide