ZTX755 Search Results

FXT755

Abstract: ZTX755 DSA003758
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

ZTX754

Abstract: ZTX755 IC 3263
Contextual Info: ZTX754 Not Recommended for New Design Please Use ZTX755 ZTX754 ZTX755 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr tf µs ts µs 0.8 td 0.4 Switching time VCE sat - (Volts)

Contextual Info: DISCONTINUED PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 – FEB 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt B C E E-Line TO92 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT755 ISSUE 1 - FEB 94 FEATU RES * 150 V olt V CE0 * 1 A m p continuous current * Low saturation voltage * P,o,= 1 W a tt E E-Line T092 Compatible REFER TO ZTX755 FOR G R A P H S ABSOLUTE MAXIMUM RATINGS. PA R A M ET E R

Contextual Info: ZTX755M1 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - FEB 9 4 FXT755 _ FEATURES * 150 Volt V,CEO 1 Amp continuous current Low saturation voltage Pt0,= 1 Watt E-Line T092 Compatible REFER TO ZTX755 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER

ZTX754

Abstract: ZTX755 DSA003775
Contextual Info: ZTX754 ZTX755 ISSUE 2 – JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS td tr tf µs ts µs 0.8 td 0.4 Switching time VCE sat - (Volts) 0.6 IC/IB=10 0.4 0.2 0.001 0.01 0.1 IB1=IB2=IC/10

pnp Transistor TO92 5V 200mA

Abstract: ZTX755 ZTX776 DSA003775 3270 transistor
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ZTX776 ISSUE 1 – JULY 94 FEATURES * 200 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B REFER TO ZTX755 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS _ _ ISSUE 2 - JULY 94 FEATURES * 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 Watt E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

SE178

Contextual Info: PNP Silicon Planar Medium Power High Voltage Transistors ZTX754 ZTX755 FEATURES • • • • • • 1 .5 W power dissipation at T amb = 2 5 ° C * 1A continuous lc Guaranteed hFE specified up to 1A Voltages up to 1 5 0 V Low saturation voltages Complementary types

Contextual Info: ZTX755 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ZTX754 ZTX755 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS - - - ISSUE 2 - JULY 94 FEATURES * 150 V olt VCE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W att / E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - JULY 94 FEATURES * * 200 V olt VCE0 1 A m p continuous current * Ptot= 1 W att REFER TO ZTX755 FOR GRAPHS E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

ztx795a

Abstract: FZT755
Contextual Info: High Voltage Transistors PNP High Voltage Transistors 140 to 200 Volts The Zetex range of 140 to 200V transistors provides optimized high performance PNP specifications in a variety of through hole and surface mount packages. Providing very efficient high voltage operation, these devices are ideally suited to motor

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

ZTX458

Abstract: ZTX558 ZTX758 BF493 ZTX4555 BF392 BF393 MPSA92 ZTX658 ZTX757
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability. Type Max V CE sat at hFE at V cbo V CEO V V mA V mA NPN

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

Contextual Info: TS PLESSEY SENI C O N D / D I SC R E T E 7220533 PLESSEY F Ë Ï 7E50533 000SD7M 7 95D 0 5 0 7 4 SEMICOND/ D IS CRE TE Super E-line transistors TABLE 4 : NPN/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO

BF493

Abstract: ZTX338 MPSA06 ZTX451 ZTX452 ZTX454 ZTX551 ZTX552 ZTX553 ZTX554
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay S w itching, etc.

2TX650

Abstract: zetex transistors TO92 BF493 ZTX458 ZTX558 ZTX758 BF392 BF393 MPSA92 ZTX658
Contextual Info: SbE » • ^70570 DGDb^M2 GTfl H Z E T B T -'Z /l-O l TABLE 13 : NPIU/PNP HIGH VOLTAGE TRANSISTORS The transistors shown in this table are designed for driving numerical indicator tubes, neon lamps and other applications requiring high voltage capability.

ZT Ferranti

Abstract: BF4935P SE-169 TX-550 X752 X449
Contextual Info: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current