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    BF1205 Price and Stock

    Rochester Electronics LLC BF1205,115

    RF MOSFET 5V 6TSSOP
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    DigiKey BF1205,115 Bulk 24,000 1,211
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    NXP Semiconductors BF1205,135

    RF MOSFET 5V 6TSSOP
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    NXP Semiconductors BF1205,115

    RF MOSFET 5V 6TSSOP
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    Rochester Electronics BF1205,115 24,000 1
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    NXP Semiconductors BF1205C,115

    RF MOSFET 5V 6TSSOP
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    GCT Semiconductor Inc BF120-54-A-0-N-D

    54W, 2MM SOCKET, DIL, SMT, VERT,
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    DigiKey BF120-54-A-0-N-D Tube 2,000
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    BF1205 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BF1205 NXP Semiconductors BF1205 - TRANSISTOR 30 mA, 10 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SC-88, 6 PIN, FET General Purpose Small Signal Original PDF
    BF1205 Philips Semiconductors Dual N-channel dual gate MOS-FET Original PDF
    BF120-50-A-0-N-D GCT Semiconductor 50W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF1205,115 NXP Semiconductors BF1205 - Dual N-channel dual gate MOS-FET, SOT363 Package, Standard Marking, Reel Pack, SMD, 7" Original PDF
    BF1205,115 NXP Semiconductors Dual N-channel dual gate MOS-FET - CIS TYP: 1.82.0 pF; COS: 0.750.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.2@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 107 V; YFS min.: 26 mS; Package: SOT363 (SC-88); Container: Tape reel smd Original PDF
    BF1205,135 NXP Semiconductors BF1205 - Dual N-channel dual gate MOS-FET, SOT363 Package, Standard Marking, Reel Pack, SMD, Large Original PDF
    BF1205,135 NXP Semiconductors Dual N-channel dual gate MOS-FET - CIS TYP: 1.82.0 pF; COS: 0.750.85 pF; ID: 30 mA; IDSS: 8 to 16 mA; Noise figure: 1.2@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 107 V; YFS min.: 26 mS; Package: SOT363 (SC-88); Container: Tape reel smd Original PDF
    BF120-52-A-0-N-D GCT Semiconductor 52W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF120-54-A-0-N-D GCT Semiconductor 54W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF120-56-A-0-N-D GCT Semiconductor 56W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF120-58-A-0-N-D GCT Semiconductor 58W, 2MM SOCKET, DIL, SMT, VERT, Original PDF
    BF1205C NXP Semiconductors BF1205C - Dual N-channel dual gate MOS-FET - CIS TYP: 2.22.0 pF; COS: 0.90.85 pF; ID: 30 mA; IDSS: 14 to 24 & 9 to 17 mA; Noise figure: 1.4@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 2628 mS Original PDF
    BF1205C Philips Semiconductors Dual N-channel dual gate MOS-FET Original PDF
    BF1205C,115 NXP Semiconductors BF1205C - TRANSISTOR 30 mA, 6 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, MICRO MINIATURE, SC-88, 6 PIN, FET General Purpose Small Signal Original PDF
    BF1205C,115 NXP Semiconductors Dual N-channel dual gate MOS-FET - CIS TYP: 2.22.0 pF; COS: 0.90.85 pF; ID: 30 mA; IDSS: 14 to 24 & 9 to 17 mA; Noise figure: 1.4@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 2628 mS; Package: SOT363 (SC-88); Container: Tape reel smd Original PDF
    BF1205CT/R NXP Semiconductors Dual N-channel dual gate MOS-FET - CIS TYP: 2.22.0 pF; COS: 0.90.85 pF; ID: 30 mA; IDSS: 14 to 24 & 9 to 17 mA; Noise figure: 1.4@800MHz & 1.4@800MHz dB; Note: Two low noise gain amplifiers in one package ; -V(P)GS MAX: 1 V; VDSmax: 6 V; YFS min.: 2628 mS Original PDF