BF100 Search Results

Contextual Info: 1 2 3 Global Connector Technology Ltd. - BF100: 2.0mm PITCH SOCKET, DUAL ROW, SURFACE MOUNT 5 4 6 7 8 A A B B C C D D E E SPECIFICATIONS 规格 Ordering Grid CURRENT RATING 电流额定值: 2 AMP INSULATOR RESISTANCE 绝缘电阻值: 1000 MEGOHMS MIN. BF100 XX

BF1005SR

Abstract: BF1005 BF1005S BF1005SW
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Abstract: VPS05178
Contextual Info: BF1005 Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SR

Contextual Info: BF1009SR Dual - MOS FET Monolithic Integrated Circuit
For low noise, high gain controlled input stages up to 1GHz
Operating voltage 9V
Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

CRYDOM BF100

Abstract: PA100V 24V to 0-10v POTENTIOMETER BF100V angle phase control PA100V-0-10V PA100 4-20ma ssr 100C
Contextual Info: C3VZDDM BF100 and PA100 EUROPE SSR Control Modules Features: □ Burst Firing and Phase Angle control versions □ Directly mounted to SSR □ LED output indication □ Remote or local control BF100 Series modules are time proportional "Burst Firing" controllers for use with zero

BF1005S

Abstract: VPS05178
Contextual Info: BF1005S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005SR

Abstract: marking NZs
Contextual Info: BF1005SR Dual - MOS FET Monolithic Integrated Circuit
For low noise, high gain controlled input stages up to 1GHz
Operating voltage 5V
Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005SR

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009S BF1009SR BF1009W
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009S

Abstract: VPS05178
Contextual Info: BF1009S Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled input stages up to 1GHz 4
Operating voltage 9V
Integrated bias network 2 Drain AGC HF Input G2 G1 HF Output + DC GND 1 VPS05178 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: marking g1s
Contextual Info: BF1009SW Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 9V
Integrated bias network Drain AGC HF Input G2 G1 2 HF Output + DC GND 1 VPS05605 EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Abstract: BF1005R BF1005W BFP181 BFP181R
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

BF1005

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1009SW

Abstract: BF1009 marking code g2s
Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

siemens MOSFET 14

Abstract: Marking G1s
Contextual Info: SIEMENS BF1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network Z AGC o - X - HF o Input Droin G21 HF O utput + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

sot143 marking code G2

Abstract: G2 MARKING CODE 5 PIN
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF1005

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP181

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

BF1005SR

Abstract: BF1005S BF1005SW BFP181 BFP181R
Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!