BF1009SR Search Results
BF1009SR Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BF1009SR | Infineon Technologies | Dual-MOS FET Monolithic Integrated Circuit | Original | 103.57KB | 5 | ||
| BF1009SR | Infineon Technologies | Silicon N-Channel MOSFET Tetrode | Original | 254.84KB | 5 | ||
| BF1009SR | Infineon Technologies | Single Full Biased; Package: PG-SOT143-4; ID (max): 25.0 mA; Ptot (max): 200.0 mW; gfs (typ): 30.0 mS; Gp (typ): 22.0 dB; F (typ): 1.4 dB; | Original | 81.55KB | 8 | ||
| BF1009SRE6327 | Infineon Technologies | TRANS MOSFET N-CH 12V 0.025A 4SOT-143R | Original | 254.84KB | 5 | ||
| BF1009SRE6327 | Infineon Technologies | RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12V 25MA SOT-143R | Original | 8 | |||
| BF1009SRE6327HTSA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - MOSFET N-CH 12V 25MA SOT-143R | Original | 84.23KB |
BF1009SR Price and Stock
Infineon Technologies AG BF1009SRE6327HTSA1RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BF1009SRE6327HTSA1 | 11,332 |
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Get Quote | |||||||
BF1009SR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BF1009SRContextual Info: BF1009SR Dual - MOS FET Monolithic Integrated Circuit For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated stabilized bias network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
Original |
bf1009sreha07215ot143rdec-04-2002+1 | |
BF1009SWContextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! |
Original |
bf1009seha07215bf1009srot143+3 | |
XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
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Original |
24ghzbf517bf770abf771+16 | |
MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
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te121mpf102 spice modelblf278 mosfet hf amplifierblf4g08ls-160a+7 | |
BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
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Original |
24ghzbf517bf770abf771+16 | |
BF1009SW
Abstract: BF1009S BF1009SR BF1009W
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Original |
bf1009seha07215ot143bf1009sr+5 | |
cdma Booster schematic
Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
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b132-h9014-x-x-7600nb07-1094cdma booster schematicuwb transceiver+8 | |
BF1009SW
Abstract: BF1009 marking code g2s
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Original |
bf1009seha07215bf1009srot143+5 | |
600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9 | |
2sc3052ef
Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
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24ghzbf517b132-h8248-g5-x-76002sc3052ef+9 | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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tle4957csle66r35e7sak-xc2060m-104f80l aaesd204+6 | |
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Contextual Info: BF1009S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input |
Original |
bf1009sot143bf1009srot143r | |
sot143 marking code g2
Abstract: p 1S marking SOT143 BF1009S BF1009SR BFP181 BFP181R
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Original |
bf1009sot143bf1009srot143r+4 | |
BF1009SWContextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution! |
Original |
bf1009sbf1009srot143ot143r+3 |