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BF1009W Datasheets (1)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF1009W		Infineon Technologies	TRANS MOSFET N-CH 12V 0.025A 4SOT-343	Original	PDF	254.84KB	5

BF1009W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF1009SW Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1009s eha07215 bf1009sr ot143 +3ot143r bf1009w bf1009sw	PDF
BF1009SW Abstract: BF1009S BF1009SR BF1009W Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1009s eha07215 ot143 bf1009sr +5ot143r feb-18-2004 200mhz bf1009sw bf1009w	PDF
BF1009SW Abstract: BF1009 marking code g2s Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1009s eha07215 bf1009sr ot143 +5ot143r bf1009w bf1009sw bf1009 marking code g2s	PDF
BF1009SW Contextual Info: BF1009S. Silicon N_Channel MOSFET Tetrode • For low noise, high gain controlled input stage up to 1 GHz • Operating voltage 9 V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1009s bf1009sr ot143 ot143r +3bf1009w 10mponents bf1009sw	PDF