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    BDY46 Search Results

    BDY46 Datasheets (12)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BDY46
    Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=300 / Ic=15 / Hfe=20min / fT(Hz)=13M / Pwr(W)=95 Original PDF 10.98KB 1
    BDY46
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 53.68KB 1
    BDY46
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 165.99KB 1
    BDY46
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 154.11KB 1
    BDY46
    Unknown Transistor Replacements Scan PDF 65.58KB 1
    BDY46
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 65.36KB 1
    BDY46
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 118.2KB 1
    BDY46
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 86.67KB 1
    BDY46
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.84KB 1
    BDY46
    Philips Components Philips Data Book Scan Scan PDF 50.66KB 1
    BDY46
    Telefunken Electronic Electronic Component Data Book 1976 Scan PDF 80.53KB 1
    BDY46
    Telefunken Electronic Power Transistors 1977/78 Scan PDF 170.4KB 7

    BDY46 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BDY77

    Abstract: BFR99 BDY79 BDY58B BDY61 BDY71 BFQ36 BDY45 BDY54 BDY55
    Contextual Info: 4ÖE ì> m 0133167 DGGG450 4 T Ì SEMELAB ISMLB SEMELAB LTD T.Ay.a , BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Num ber BDY45 BDY46 BI1Y47 BDY54 BDY55 BDY56 BDY57 BDY58 BDY58A BDY58B BDY58C BDY60 BÜY61 BDY62 BDY71 BDY72 BDY73 BDY74


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    bdy4520minddy46bdy54+11bdy55bdy56bdy57bdy58bdy77bfr99bdy79bdy58bbdy61bdy71bfq36 PDF

    BDY46

    Contextual Info: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdy46o204aa31-jul-02 PDF

    transistor tl 430 c

    Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =


    Original
    bdy46transistor tl 430 c PDF

    Contextual Info: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdy46o204aa16-jul-02 PDF

    BDV25

    Abstract: BDY25B BDY38 BDY96
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BDV25 BDY25A BDY25B BDY25C BDY26 BDY26B BDY26C BDY27 BDY27AS BDY27B BDY27C BDY27CX BDY28 BDY28B BDY28C BDY29 BDY37 BDY38 BDY39 BDY42 BDY43 BDY44 BDY45 BDY46 BDY47 BDY54 BDY55 BDY55 CECC BDY56 BDY56 CECC


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    bdv25bdy25abdy25bbdy25c+8bdy26bdy26bbdy26cbdy27bdy27asbdy27bbdy38bdy96 PDF

    Contextual Info: BDY46 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    bdy46o204aa18-jun-02 PDF

    BD NPN transistors 177

    Abstract: B0186 BD139 BDY47 s3 npn BD 440 NPN transistors aot 128 B0165 B0180 BDY42
    Contextual Info: Power transistors Type Structure Fig. Nr. Characteristics Maximum ratings A o t at 'case = + 2 5 °c W A V /T MHz 7C mA UC EO Af e at / q and ^CE A V ^CEsat at V I q and *FE A BD 127 NPN 23 17.5' 0.5 250 - - 50 1 15 - - BD128 NPN 23 17.5’) 0.5 300 1 15


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    bdy42bdy43bdy44bdy45+10bdy46bdy47bd npn transistors 177b0186bd139s3 npnbd 440 npn transistorsaot 128b0165b0180 PDF

    BUV93

    Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
    Contextual Info: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated


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    ooosb43-wt--214-buv93tu f 13003+8buv95to-220 weightx 1300313002 to-9213003 to-9213007te1300213003 PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


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    bd135bd136bd137bd138+16bd139bd140bd142bd144bd157bd158je350je180mj13004tp33cbd325je172bdx48je340bd160but55 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    BDY11

    Abstract: BDY16 BDY77 BDY61 BDY47 BDY24 BDY29 BDY37 BDY12 BDY13
    Contextual Info: SEMELAB LTD B DY11 B DY12 BDY13 BDY16 BDY20 SC REEN HI-REL HI-REL HI-REL SC REEN NPN PNP NPN NPN N PN BDY23 BDY24 BDY25 BDY26 B DY27 SCREEN SC REEN SCREEN HI-REL HI-REL NPN NPN N PN N PN NPN BDY28 B DY29 B DY37 BDY38 BDY39 HI-REL HI-REL S C REEN S C REEN SC REEN


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    bdy11bdy12bdy13bdy16+11bdy20bdy23bdy24bdy25bdy26bdy27bdy77bdy61bdy47bdy29bdy37 PDF

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


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    2n30542n327412n42402n4908+162n3054a2n37662n42732n49092n30552n3767strs6307str54122n3055 to-220s2000a3strs6309s2000a2bdw362sc3883strs6308str6020 PDF

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367 PDF