BD226 Search Results

BD230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BD228

Abstract: BD226 BD230 BD227 BD229 BD231 Power Transistors TO-126 heatsink
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BD231

Abstract: Bh23 BD227 BD226 BD229 transistor BD 137 Transistors bd 133 BD228 BD230 C 1972 transistor
Contextual Info: BD227 BD229 BD231 I P H IL IP S IN T E R N IS T SbE , H ïp H I N T '3 3 - ir SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

BD230

Abstract: lm 383 ic
Contextual Info: BD226 BD228 BD230 SILICON PLANAR EPITAXIAL POWER TRANSISTORS G e n e r a l p u r p o s e n - p - n t r a n s i s t o r s in a S O T - 3 2 p l a s t i c p a c k a g e e s p e c i a l l y r e c o m m e n d e d f o r t e l e v i s i o n c i r c u i t s . T h e i r c o m p l e m e n t s a r e B D 2 2 7 , B D 2 2 9 and B D 2 3 1 .

Contextual Info: BD226 BD228 BD230 _ J V SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral purpose n -p -n tra n s is to rs in a SOT-32 plastic envelope especially recommended for television c irc u its. T h eir complements a re BD227, BD229 and BD231.

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs Current Limit High Side Switch ICs BD226xG-M Series General Description Key Specifications BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus USB applications. BD226xG-M

Contextual Info: BD227 BD229 BD231 J K . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

BD228

Abstract: C 1972 transistor BD230 BD226 BD226-BD227 BD227 BD229 BD231 BD230-BD231 BD228-BD229
Contextual Info: BD226 BD228 BD230 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD227, BD229 and BD231. QUICK REFERENCE DATA BD226 BD228 BD230

Transistors bd 133

Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
Contextual Info: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs Current Limit High Side Switch ICs BD226xG-M Series General Description Key Specifications BD226xG-M series are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus USB applications. BD226xG-M

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs 1.3A Current Limit High Side Switch ICs BD2268G-M BD2269G-M General Description Key Specifications BD2268G-M and BD2269G-M are low ON-Resistance N-Channel MOSFET high-side power switches, optimized for Universal Serial Bus USB applications.

BD226

Abstract: T-33-07 C 1972 transistor BD227 BD228 BD230 BD229 BD231 3307 jnib
Contextual Info: _ PHILI P S I N T E R N A T I O N A L BD226 BD228 BD230 J m SbE ]> 711DflEti 004EA314 ^37 • P H I N SILICON PLANAR EPITAXIAL POWER TRANSISTORS T~ 3 3 - 0 7 G en eral purpose n -p-n tra n sisto r s in a SOT-32 p lastic envelope esp ecially recom m ended

siemens

Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
Contextual Info: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226

BD223

Abstract: bd230 bd226
Contextual Info: Philips Semiconductors Product specification NPN power transistors BD226; BD228; BD230 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 em itter 2 collector, connected to m etal part of m ounting surface 3 base DESCRIPTION

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —