2N6711 Search Results

Contextual Info: 2N6711 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)100m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)30m

siemens

Abstract: MXT2907A philips BD139-BD140 BD139 philips 92PE37B bd139 bd140 BD230 FXT651 BD139
Contextual Info: CENTRE COLLECTOR E LINE CRO SS REFERENCE LISTS THROUGH HOLE CENTRE COLLECTOR Part No. 2N6705 2N6706 2N6707 2N6708 2N6709 2N6710 2N6711 2N6712 2N6713 BC368 BC369 BC635 BC636 BC637 BC638 BC639 BC640 BC875 BC877 BC879 BD135 B 0 136 BD137 BD138 BD139 BD140 BD226

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

2N6706

Abstract: 2N6713 2371 C 2371
Contextual Info: TO-237 - - - - - - . COIL CODE STYLE PIN 1 PIN 2 PIN 3 TO -237 EMiTTER BASE COLLECTOR TO—237—1 BASE COLLECTOR EMITTER TO—2 3 7 -2 COLLECTOR BASE EMiTTER TO-237 Plastic Package Transistors NPN M axim um R atin gs

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

2N6805

Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab

2N5715

Abstract: transistor 2N3569 2N3569 d44c3 NSDU07 d40p3 "NPN Transistors" 2n3567 u3sg dd354 2N3566
Contextual Info: NATL SEMICOND {DISCRETE} 650 1130 NATL SEMICOND, CM CM u CN Sfl DE | b S O U H O 003SmE 28C 35412 DISCRETE CN CN CN 7 CN CN "D _ Z 0. ' S - / y -c// - 3* 3 - (0 Max NF (dB) o CN Ï CO o Ô) St'S S .?.£ s O O in in o in o in o in . O in o in • o >o <

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

MSP90

Abstract: 2SC2224A BF617 BF393W 2sc2224 ST2260
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 30 35 40 BF393W2 2SC1505 2SC1506 2SC1506 2SC1507 2SC1507 2SC1507 2SC2621 2SC2653 ~:;~~t:i88 2SC2688 2SC2802 2SC2802 2SC4075 2S01112 KSC1507 KSC1520A 2SC3209M 2SC3554 ~~t;~~9L 45 50 2SC3209K 2SC3183

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

2N6591

Contextual Info: NATL SEMICÔND DISCRETE 2SE ». • bSG1130 G0377Ô5 1 ■ NPN Medium Power Transistors by Ascending Vceo (V) Min NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 TN2102 65 40 2N5321 D40D10 D40D11 D40D13 D40D14 NSD6178 75 75 75 75 75 75 40 50 120 50 120

2N6706

Abstract: 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445
Contextual Info: -Tosar.- • ~~1 DIM A B C D E F F h - B —I C n < 3 2 1 MIN MAX 4,32 5,33 4,45 5,20 3,18 4,19 0,41 0,55 0,35 0,50 0,55 1,14 1,40 2,54 12,70 5 D EG G H K L ALL DIMENSIONS ARE IN M.M. y1 PIN CONFIGURATION AVAILABLE IN TO-237 3 CDIL Code Style PIN 1 TO-237

2N3567

Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA

2N6712

Contextual Info: GENERAL-PURPOSE TRANSISTORS HIGH-VOLTAGE TRANSISTORS DARUNGTON TRANSISTORS RF/UHF/VHF AMPLIFIERS AND CATV TRANSISTORS * SCR SENSITIVE GATE SILICON CONTROLLED RECTIIFIERS * * * * GENERAL- PURPOSE TRAMS ISTORS These general purpose transistors are designed to meet general applications with current up to 2A,

"NPN Transistors" 2n3567

Abstract: NSE459 NSDU05 NSD458 2N6718 TO-237 2N3569 2N6593 2N5336 2N3567 MPSW06
Contextual Info: NPN Transistors NATL S e m iS o n d u c t o r VCER* v CEO V Min M e d iu m P o w e r 'c e s ' hFE •cBOg, VCB @ *C & VCE (nA) (V) Min Max (mA) (V) Max VCbo (V) Min 2N699 TO-39 120 60 5 2 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40