DD354 Search Results

GDIP1-T32

Abstract: CY7C1048-45F CY7C1048 qml-38535 5962-95600 5962-9560003MXA smd marking code tm 5962-9560004MYA ed188512 EDI88512CA20N36B
Contextual Info: REVISIONS LTR ] DESCRIPTION DATE APPRO VED YR-MO-DA A Change minimum limit of dimension Q for case outline T. Changes in accordance with NOR 5962-R 145-97. 96-11-27 Raymond Monnin B Add note 4 / to \ \ j\ _ q z ’ ^ D R ’ anc* *R 'n tab'e Add note 5/ to % |_qx.

dish

Abstract: DD356
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

Contextual Info: Pr o d u c t S p e c if ic a t io n < £ 3 L0 E Z85230 E S C C E n h a n c e d S e r ia l C o m m u n ic a t io n C o n t r o l l e r FEATURES • Deeper Data FIFOs - 4-Byte Transm it FIFO - 8-Byte Receive FIFO ■ Program m able FIFO Interrupt Levels Provide Flexible

Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

Contextual Info: C u s t o m e r P r o c u r e m e n t S p e c if ic a tio n < $ > 2 ¡L C E Z86C30/C31/C32/C40 C M O S Z8 C o n s u m e r Co ntroller P rocessor FEATURES Part ROM Kbyte RAM* (Byte) Speed (MHz) 4 2 2 4 237 125 237 236 16 12 12 16 Z86C30 Z86C31 Z86C32 Z86C40

SOT-90B

Abstract: CNY17-1 17F-2 17-F1 Y17F CNY17 CNY17F CNY17F-1 17F-3 17-F4
Contextual Info: P h ilip s Sem icon du ctor« P rodu ct specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPRO VALS FEATURES • Fast switching S TA N D A R D • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with V D E 0883/6.80

2N5715

Abstract: transistor 2N3569 2N3569 d44c3 NSDU07 d40p3 "NPN Transistors" 2n3567 u3sg dd354 2N3566
Contextual Info: NATL SEMICOND {DISCRETE} 650 1130 NATL SEMICOND, CM CM u CN Sfl DE | b S O U H O 003SmE 28C 35412 DISCRETE CN CN CN 7 CN CN "D _ Z 0. ' S - / y -c// - 3* 3 - (0 Max NF (dB) o CN Ï CO o Ô) St'S S .?.£ s O O in in o in o in o in . O in o in • o >o <

C254D

Abstract: cmos dram NCC KMQ
Contextual Info: KM416V254DJ ELECTRONICS CMOS D R A M 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

Contextual Info: DD350/S – DD356/S 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction      Low Leakage Low Cost High Surge Current Capability Low Forward Voltage Drop C-Band Terminal Construction

PEAK TRAY

Abstract: DD356 DD352R
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS 35A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C D Mechanical Data B ! ! ! ! ! Case: All Copper Case and Components

Contextual Info: DD350/S – DD356/S WTE POWER Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data B Case: 8.4mm or 9.5mm Dish Type Press-Fit

DD356

Abstract: Diode press-fit DD350 DD350SR DD350S DD354
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

qml-38535

Abstract: GDFP1-F14 TLC2252 TLC2252A TLC2254 TLC2254A FKB* MARKING
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device class N and plastic small outlines X and Y. Make changes to 1.2.3,1.2.4,1.3, table I, figure 1, figure 2, and table II. 95-07-20 M. A. FRYE B Add device types 03 and 04. Technical and editoral changes

SOT230

Abstract: 234 optocoupler CNX62A BS415 BS7002 T30 transistor
Contextual Info: Product specification P h ilip s Sem icon du ctor« High-voltage optocoupler CNX62A FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and DC Insulation 3750 V (RMS and