FAB53 Search Results

L69A

Abstract: L69C ECG1824 L75B ECG1823 18pin TFT module ECG1819 ECG1871 ECG1815 ECG1814
Contextual Info: PHILIPS E C INC 6 3EE D B fab53*12ù 0Q0b77S 7 CMECG T ~ 7 7 '2 i 1C and M odule Circuits cont'd ECG1814 18-Pin DIP See Fig. L115A VCR Color Signal Processor (CMOS), V d d = 5 V Typ VDD D ECG1815 AF PO, 20 W, V cc= ±23 V, R l = 8 Q ;ri B U R S T G ATE

ir receiver philips

Abstract: Ecg1237
Contextual Info: PHILIPS E C 6 INC 17E T -7 7 -0 5 -0 5 ECG ECG1237 A M RADIO RECEIVER Semiconductors 14 13 M FEATURES! • T U N IN G METER CIRCUIT • WIDE A G C RANGE fab53iaa 0D0M77E 2 II 10 9 .296" 6.9 MAX. 4 1 2 p 3 4 9 6 7 027"(2I)MAX. .627"(2I)M AX« - . * j

BTV58-600R

Abstract: transistor BU 921 T DIODE 25PH 200 gate turn off thyristors 600R M1601 M1602 25ls gt
Contextual Info: N ÂtTeR P H I L I P S / D I S C R E T E DkE D • fab53T31 O O l l ô 1^ I _ T m BTV58 SERIES _/ I s~ FAST GATE TURN-OFF THYRISTORS Thyristors in TO-220AB envelopes capable of being turned both on and off via the gate. Thev are

PKB3001U

Abstract: PTB32001X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • fab53131 G01507cl 4 ■ MAINTENANCE TYPE PKB3001U for new design use PT632001X T > 3 3 -O S r * < „ MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

BF939

Abstract: 60S2 N322 transistor BF939 n3220
Contextual Info: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.

PBYR740

Abstract: M3202 M3201 PBYR735 PBYR745
Contextual Info: PBYR735 PBYR740 PBYR745 N AMER PHI LIPS/DISCRETE 2SE D 1 fab53131 0022157 1 • T-Ô Z- 17 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended for use in

K 3699 transistor

Abstract: BLY88A 3699 npn pscw
Contextual Info: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

TDA4565

Abstract: TDA4555 TDA4650 TDA4670 TDA4680 TDA4685 TDA4686 TDA4686WP 12C-bus 15354 time switch
Contextual Info: b3E D NAPC/PHILIPS SEMICOND • ^53*124 D07Ö4MM 411 W Ë S I C 3 Preliminary specification Philip* Sem iconductor* Video Products Video processor, with automatic cut-off control FEATURES TDA4686 • Cut-off measurement pulses after end of the vertical blanking pulse or end of an

IC 2561 D 431

Abstract: NK 0609 tf 1053 transistor equivalent table 1377 transistor Philips FA 261 lc 945 p transistor NPN TO 92 lc 945 p transistor NPN lc 945 p transistor BFG93 BFG93A
Contextual Info: OGPMf l f l O 0 T 0 Philips Semiconductors NPN 6 GHz wideband transistor — g IAPX Product specification BFG93A; BFG93A/X; BFG93A/XR N AMER P H I L I P S / D I S C R E T E J> b?E PINNING FEATURES PIN • High power gain • Low noise figure • Gold metallization ensures

IEC134

Abstract: LAE4002S
Contextual Info: I-« N AMER P H IL IP S /D IS C R E T E OLE D • hbSBTBl 0014*107 T ■ LAE4002S MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for common-emitter ciass-A linear power amplifiers up to 4 GHz. Diffused emitter . ballasting resistors, self-aligned process entirely ion implanted and gold sandwich metallization ensure

BUK454-600A

Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
Contextual Info: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

SCN68000C8N64

Abstract: CZ 5.0VDC SCN68000C6A68 DAN-101 SCN68000 S68000 ls- 11m scn680 scn68020 SCN68000C8I64
Contextual Info: 2TE D NAPC/ SIGNETICS • b b S 3 T 24 005405=1 T ■ T-V9-V7-/V SCN68000 Signetics 16-/32-Bit Microprocessor Product Specification Microprocessor Products DESCRIPTION PIN CONFIGURATION The SCN68000 is the first implementa­ tion of the S68000 1 6 /3 2 bit micropro­

BZV85

Abstract: c8v2 BB531 c9v1
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bb53T31 OOlbTBI Q ■ BZV85 SERIES A _ T-// -/ 3 VOLTAGE REGULATOR DIODES V - Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended fo r stabilization purposes. The series covers the normalized E24 ± 5% range o f nominal working voltages

BF994 M94

Abstract: BF994 FET MARKING CODE
Contextual Info: _I f N AMER PHILIPS/DISCRETE obE D • Q0 i ^53131 J 30 ü a 4 1 BF994 L T ' 3 i - a r SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and

HORIZONTAL DRIVER TRANSISTOR

Abstract: philips 7ff2 ECG852 ecg649 pin diagram of lt 542 transistor driver horizontal ECG815 734 10 pins
Contextual Info: J. 17E D • PHILIPS E C G INC bb53is a OOQSOtH 5 ECG852 IMo Hold Control, V e rt/H o riz Circuit S em ico n d u cto rs Features • No frequency setup required for horizontal or vertical • Ceramic resonator frequency reference • Accurate horizontal pre-driver duty

ECG942

Contextual Info: PHILIPS E C G INC 17E ECG 14 is I2 il io 9 .2 8 0 " 7 .ll MAX. I I 2 3 4 5 -J Rating Unit Supply Voltage +40 V Power Dissipation (Note 1) 715 mW Oto 70 °C -65 to +150 °C 300 °C N ote 1 i For operation in ambient tem peratures above 2 5 °C , the E C G 9 4 2 must

Contextual Info: N AMER PHILIPS/D IS CRETE - E5E D • 1^53=131 D D i m O S Q ■ I BD242; BD242A BD242B; BD242C J T -3 3 -1 ? SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages, general amplifier

ECG1067

Contextual Info: 17E ¿y • PHILIPS E C G INC ELECTRICAL CHARACTERISTICS To = 25°C MAXIMUM RATINGS (To = 25°C ) ITEM I 13-1 III RATING ITEM UNIT + 15.6. V + 41 mA Ito t + 1 5.6, 0 V Vi V is- i + 5 , - 5 V V» V !«-! + 6 , - 5 V Ij + 0 .1 , - 1 0 mA V 15-1 MIN. TYP.

bsx20

Contextual Info: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO

Contextual Info: P rod uct sp e c ific a tio n P h ilip s S e m icon ducto rs CNR50 Dedicated IC-optocoupler FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation with a pin distance of 10.16 mm • A clearance of 9.6 mm minimum

ECQ1275

Abstract: ecg1276 car voltage stabilizer ECG1170 ECG1275 A420F philips audio power amplifier ic
Contextual Info: PHILIPS E C G INC 17E ß m bbSBTSfl DOOMÒS11] 3 ECG E C G 1275 5.8 W A udio Pow er Am plifier S e m ic o n d u c t o r s Features • H igh output power: P0 = 5.8 W Typ. • Few external com ponents required capacitors only • Low noise: V n o “ 1-4 m Vrm s Typ.

ECG129

Abstract: ECG1549 VU peak hold ECG1509 Peak LED level meter driver ic 50 led VU meter 20 led VU meter transistor 45406 30 led VU meter stereo ECG1649
Contextual Info: PHILIPS E C G INC 17E ECG Semiconductors Features • Fast responding electronic VU meter • Drives LED s, LC D s, or vacuum fluorescents • Bar or dot display mode externally selectable by user • Expandable to displays of 70 dB • Internal voltage reference from 1,2 V

L31A

Abstract: 131H BUS131 BUS131A BUS131H
Contextual Info: • DEVELOPMENT DATA ^53=131 GGia7b7 7 ■ [I This data sheet contains a v a n c e in form ation and specifications are subject to change w ith o u t notice. BUS131 SERIES N AMER PHILIPS/DISCRETE 2SE D T - 33-/3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO -3 envelope, intended fo r use in very fast

Contextual Info: N AMER PHILIPS/DISCRETE DbE D btiSBTBl QDISTSE 1 BSR17 BSR17A -T -3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA