B5313 Search Results

Contextual Info: PBYR1635 PBYR1640 PBYR1645 - N AMER PHILIPS/DISCRETE 25E D E3 fe,b5313]i OOSSTS? T B 7^0 3 - ; 7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum-barrier rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence of stored charge. They are intended fo r use in

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

10J 6KV

Abstract: OSM9510-12 T-23
Contextual Info: OSM951Q-12 MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E 2SE D Q t>b53131 O O E E T I B 1 7z-23 - ¿ > s r HIGH-VOLTAGE RECTIFIER STACK The OSM9510-12 is a Silicon re c tifie r stack for high voltage applications up to 12kV in half-w ave circ u its, o r up to 6kV as one of the arm s of a

buz349

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUS133

Abstract: BUS133A BUS133H TO3 philips
Contextual Info: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S

bs107 transistor

Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching

4312 020 36640

Abstract: BY206 BLX39 bv-300 carbon resistors
Contextual Info: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

BUZ384

Contextual Info: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

M3105

Abstract: BY359F IEC134 M2296 M3103
Contextual Info: I I N AMER P H I L I P S / D I S C R E T E 2SE D ^53=131 0G52351 7 • MAINTENANCE TYPE BY359F—1500 l^ O Z -1 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery

15S2

Abstract: BY229F IEC134 M2296 D8663
Contextual Info: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

u706

Abstract: BU706 BU706D
Contextual Info: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The

D768

Abstract: 2F67
Contextual Info: 1 234567381 1 • • • • • • • • • • • • • • • • • 1 1 964A1B65C651DBDEF8B453A1E1BD375371  C37"B7$4D31E1&' *1451)+,1-1.&*1451+.,1(1

c5793

Abstract: digital multimeter 509 finest CONDENSADORES 12 Key Numeric Keypad C5445 B558 c5197 equivalent D8PSK cpu aeroflex B5226
Contextual Info: DIGITAL RF SIGNAL GENERATORS 3410 Series Operating Manual Document part no. 46892/499 DIGITAL RF SIGNAL GENERATORS 3410 Series 3412 3413 3414 3416 250 kHz–2.0 GHz 250 kHz–3.0 GHz 250 kHz–4.0 GHz 250 kHz–6.0 GHz This manual applies to instruments with software issues of 4.00 and higher.

sot199

Abstract: BDV64F lem HA BDV64AF BDV64BF BDV64CF BDV65F USB012 BDV64 B0V64B
Contextual Info: Philips Com ponents BDV64F/64AF/64BF/64CF PNP Silicon Darlington power transistors PINNING - SOT199 DESCRIPTION DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching applications.

BFR90A

Abstract: transistor KT 209 M DIN 3967 BFR90A/02 vgb 0124 transistor kt 326 A441 BFQ51 kt 829 transistor KT 209
Contextual Info: Philips Semiconductors bbSB^Bl GD31Ö03 773 APX Product specification NPN 5 GHz wideband transistor ^ BFR90A N AMER PHILIPS/DISCRETE FEATURES b'iE D PINNING • Low noise • Low intermodulation distortion PIN DESCRIPTION 3 Code: BFR90A/02 • High power gain