B53131 Search Results

buz72a

Contextual Info: N AMER PHILIPS/DISCRETE QbE D • PowerMOS transistor fc,b53131 001443? T ■ BUZ72A -j-_ 3 ^- jj May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

10J 6KV

Abstract: OSM9510-12 T-23
Contextual Info: OSM951Q-12 MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E 2SE D Q t>b53131 O O E E T I B 1 7z-23 - ¿ > s r HIGH-VOLTAGE RECTIFIER STACK The OSM9510-12 is a Silicon re c tifie r stack for high voltage applications up to 12kV in half-w ave circ u its, o r up to 6kV as one of the arm s of a

buz349

Contextual Info: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUS133

Abstract: BUS133A BUS133H TO3 philips
Contextual Info: rr • DEVELOPM ENTDATA T his data sheet contains advance Information and specifications are subject to change w ithout notice, ^53=131 0010703 S ■ 11 BUS133 S E R IE S N AMER PHILIPS/DISCRETE 5SE D — T - 3 S - 15SIL IC O N D IFFU SED PO W ER T R A N S IS T O R S

bs107 transistor

Abstract: cr 406 transistor BS107 UCB700 transistor 406 specification
Contextual Info: Philips Com ponents BS107 Data sheet status Preliminary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor PINNING - TO-92 variant PIN CONFIGURATION FEATU RES • Direct interface to C-M OS, T T L , etc. • High speed switching

4312 020 36640

Abstract: BY206 BLX39 bv-300 carbon resistors
Contextual Info: N AMER PHILIPS /D IS CR ET E t.b53T31 □ OE'ìSTG 653 I IAPX b'IE » A BLX39 H.F./V.H.F. POWER TRANSISTO R N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

BUZ384

Contextual Info: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is

Contextual Info: N AMER PHILIPS/DISCRETE E5E D ^ 5 3 1 3 1 Q030b7D S PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

Contextual Info: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

M3105

Abstract: BY359F IEC134 M2296 M3103
Contextual Info: I I N AMER P H I L I P S / D I S C R E T E 2SE D ^53=131 0G52351 7 • MAINTENANCE TYPE BY359F—1500 l^ O Z -1 7 FAST HIGH-VOLTAGE, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast recovery

15S2

Abstract: BY229F IEC134 M2296 D8663
Contextual Info: 2 SE D N AMER PHIL I P S / D I S C R E T E • ^53131 0GSS30S G ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse

Contextual Info: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.

u706

Abstract: BU706 BU706D
Contextual Info: N ÀMER PHILIPS/DISCRETE b'ìE D • ^53*131 D02Ö2T4 ôb'î M A P X I BU706 II BU706D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed sw itching npn transistors in a plastic envelope intended fo r use in h o rizo n ta l d e fle ctio n c ircu its o f co lo u r television receivers and line operated sw itch-m ode applications. The

diode 0317

Abstract: diode sv 03 7n ALPS 102 diode BYq28 BYQ28 diode sv 0317 saia double diode parallel C117 diode M1
Contextual Info: N AUER P H I LI PS /D IS CR ETE 2SE D • ^53=131 00223^5 S ■ BYQ28 SERIES Jl T - 0 3 - I7 ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r