53T31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE • UVU DbE D V I ■ W bt,53T31 0013b5fi 1 ^ ^ '» NORTH/AMPEREX/DISCRETE OLE D BLV97 _ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.

bd239a ti

Contextual Info: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.

OM320

Abstract: OM-320 D1N4500 QM320 tTR21 philips MATV amplifiers philips hybrid stk power amplifiers DIN45004 max2810
Contextual Info: li N AMER PHILIPS/DISCRETE 2SE D • bfc.53T31 0018303 0 ■ 11 O M 320 T - W - O l - O HYBRID VH F/U H F W IDE-BAND AMPLIFIER Tw o-stage wide-band am plifier in the hybrid technique, designed for use in m ast-head booster am p lifiers, a s p re-am p lifier in MATV system s, and as general-purpose am pli­

BLX94C

Abstract: BLX94A BLX94
Contextual Info: L^E » N AMER PHILIPS/DISCRETE • bfc.53T31 D021b3E IAPX D3S BLX94A BLX94C J BLX94A IS MAINTENANCE TYPE U.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors suitable fo r transmitting applications in class-A, B or C in the u.h.f. range fo r a nominal supply voltage up to 28 V . The transistors are resistance stabilized and tested

Contextual Info: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: i N AF1ER P H I L I P S / D I S C R E T E U C V C LU riV IC IN I 2 5E D bt.53T31 0 Q 2 2 4 5 3 U r t I rt 4 m BYR34 SERIES This data sheet contains advance information and specifications are subject to change w ithout notice. 7 ^ 6 3 -/ 9 J K. ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: N AMER PHILIPS/DISCRETE bfc,53T31 QOESaES 4 • ESE D BYX46 SERIES T - 0 3 - /9 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Diffused silicon diodes in DO-4 metal envelopes, capable of absorbing transients. They are primarily intended for use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier

PHILIPS BDX64

Abstract: BDX64 BDX64B BDX64 philips BDX64* darlington BDX65C PHILIPS BDX65 ic 741 by philips BDX65 BDX65A
Contextual Info: Il N AMER PHILIPS/DISCRETE 25E D • . . bt.53T31 DOlIlb? 1 ■ BDX64; 64A . BDX64B; 64C r - 3 S - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications; TO-3 envelope. N-P-N complements are BDX65, BDX65A,

Contextual Info: N AMER PHILIPS/DISCRETE = TOD D 0800160 AMPEREX, 90D 10652 D • ^ 5 3 1 3 1 OOlQbSS S SLATERSVILLE t-03-M PHSD51 JV SCHOTTKY-BARRIEB RECTIFIER DIODE High-efficiency rectifier diode in a DO—5 metal envelope, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. It is intended for use in low

1N5822

Contextual Info: Philips Semiconductors APX fc,53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

Contextual Info: APX 53T31 □□23737 b37 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN304; BSN304A N AUER PH IL IPS /DISCR ETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

byx30

Contextual Info: N AMER PHILIPS/DISCRETE 2SE D B ^53=131 0 0 2 2 7 ^ 7 B A _ BYX30 SERIES 7^0 3 - 1 7 FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 Diffused silicon diodes in DO-4 m etal envelopes, capable of absorbing tran sien ts.

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE J> 1,1,53=531 DAT JJ 002fi42b U BUT12F BUT12AF L SILICON DIFFUSED POWER TRAN SISTO RS High-voltage, high-speed, glass-passivated npn power transistors in a S O T 186 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power

Contextual Info: 35E D I I 53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bbS3T31 0Q533bS 7 • BYP21 SERIES T- 03-/7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse leakage current, low forward voltage drop, ultra fast reverse recovery times, very low stored charge

Contextual Info: N ANER PHILIPS/DISCRETE 25E D • bt.S3T31 QaaEbbT S ■ BYV118 SERIES , l 7 = V 0 3 -/7 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

Contextual Info: BSE D B ^ 53=131 □□33001 7 B PBYR16035TV PBYR16040TV PBYR16045TV U tV tLU K M tlN I UAIA This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. y v N AUER PHILIPS/DISCRETE 7 -0 3 -2 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

Contextual Info: • 55E D N ANER P H IL IP S/ DI SC R ET E 1=^53=131 □Q5E73CI Q ■ BYW29 SERIES T - 0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

BFR90 transistor

Abstract: BFR90 Transistor BFR90 BFQ51 UCD074 BFR90 PHILIPS
Contextual Info: Philips Semiconductors bbS 3*î31 O O B lTTê S f lb • APY Product specification NPN 5 GHz wideband transistor ^ BFR90 N AMER PH IL IPS/DISCRETE DESCRIPTION b'ìE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in RF amplifiers such as aerial

BYX39 400

Abstract: 617 connector BYX39-600R BYX39 BYX39-1400 BYX39-1400R BYX39-600
Contextual Info: N AMER PHILIPS/DISCRETE 25E [□^53^31 00S5Ô1S 1 Bi D BYX39 SERIES . 7 = 0 1 -1 7 CONTROLLED AVALANCHE RECTIFIER DIODES A ls o available to B S 9333— F 00 5 S ilico n diodes in a D O - 4 metal envelope, capable o f absorbing transients and Intended fo r use in p o w e r

BF908R

Abstract: BF908 URC276 MRC280 BH rn transistor
Contextual Info: ' m bbSBTBl 005355b 141 • APX Philips Semiconductors Product specification N AUER PHILIPS/DISCRETE fa?E D Dual gate MOS-FETs BF908; BF908R FEATURES QUICK REFERENCE DATA • High IY„I dual gate MOS-FET SYMBOL ■ Short channel transistor with high IYfcl : C „ ratio

OM926

Abstract: philips hybrid philips hybrid amplifier modules philips television circuit diagram
Contextual Info: QQ32HSb 271 M AP X Philips Semiconductors Product specification OM926 Hybrid wideband amplifier N AMER PHILIPS/DISCR ETE DESCRIPTION PIN CONFIGURATION PINNING A two-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is