BYW29 Search Results

Contextual Info: TO -2 20A C BYW29E-200 Ultrafast power diode Rev. 5 — 20 March 2012 Product data sheet 1. Product profile 1.1 General description Ultrafast power diode in a SOD59 2-lead TO-220AC plastic package. 1.2 Features and benefits  Fast switching  Low thermal resistance

Contextual Info: Product specification BYW29-200 Features Epoxy Meets UL 94 V-0 @ 0.125 in Low Forward Voltage 3 Low Leakage Current High Temperature Glass Passivated Junction Maximum RatingsAnd Electrical Characteristics @TA=25 Parameter Peak repetitive peak reverse voltage

BYW29-200

Contextual Info: BYW29-50 THRU BYW29-200 FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 8.0 Amperes FEATURES TO-220AC 0.185 4.70 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14)

BYW29

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast BYW29 series GENERAL DESCRIPTION Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29E series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Low thermal resistance

byw 150

Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ,\ BYW29EX series ultrafast, rugged_ 1_ GENERAL DESCRIPTION Glass passivated epitaxial rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop,

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ^ BYW29EB series ultrafast, GENERAL DESCRIPTION Glass passivated epitaxial rectifier diodes in a plastic envelope suitable for surface mounting, featuring low

Contextual Info: • 55E D N ANER P H IL IP S/ DI SC R ET E 1=^53=131 □Q5E73CI Q ■ BYW29 SERIES T - 0 3 -1 7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery

Rectifier t2d

Abstract: t2d diodes T2D 53 BYW29 BYW29-200 BYW29F-200 ISOWATT220AC "T2D"
Contextual Info: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . VERY LOW FORW ARD LOSSES ■ NEGLIGIBLE SW ITCHING LOSSES ■ HIGH SURGE CURR ENT CAPABILITY ■ HIGH AVALANC HE ENERGY CAPABILITY ■ INSULATED VERSION (ISOW ATT220AC)

Contextual Info: BYW29-xxx, BYWF29-xxx, BYWB29-xxx www.vishay.com Vishay General Semiconductor Ultrafast Rectifier FEATURES ITO-220AC TO-220AC • Power pack • Glass passivated pallet chip junction • Ultrafast recovery time • Low switching losses, high efficiency BYW29 Series

Contextual Info: DISCRETE SEMICONDUCTORS DAT BYW29EB, BYW29ED series Rectifier diodes ultrafast, rugged Product specification November 1998 NXP Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYW29EB, BYW29ED series SYMBOL • Low forward volt drop

BYW29G-200

Abstract: TP806 136d
Contextual Info: BYW29G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 200 V trr 35 ns VF 0.85 V A K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT

Contextual Info: SGS-THOMSON BYW29 F HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS ■ VERY LOW FORWARD LOSSES . ■ ■ ■ NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGYCAPABILITY INSULATED VERSION (ISO W ATT220AC ):

Contextual Info: BYW29F S E R IE S J V _ ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in SOT-186 full-pack envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged SYMBOL FEATURES • • • • • • BYW29EB, BYW29ED series QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic Reverse surge capability

Contextual Info: BYW29-150SM Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage150 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.5 @I(FM) (A) (Test Condition)20

Contextual Info: BYW29M200 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current7.3 V(RRM)(V) Rep.Pk.Rev. Voltage200 t(rr) Max.(s) Rev.Rec. Time25n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)20

Contextual Info: BYW29-50A Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current8.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time35n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)20

BYW29-200

Abstract: BYW29F-200 BYW29FP-200 BYW29G-200 ISOWATT220AC
Contextual Info: BYW29/F/FP/G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 200 V trr (max) 25 ns VF (max) 0.85 V A K K A FEATURES AND BENEFITS Very Low Forward Losses Negligible switching losses High surge current capability Insulated

AI mm sot 553

Abstract: BYW29F M2296
Contextual Info: BYW29F SERIES PHILIPS INT ERN ATI ON AL m SbE D 7 1 1 0 0 2 b 0 0 4 1 5 5 H 0^5 ULTRA FAST RECOVERY, ELECTRICALLY-ISOLATED RECTIFIER DIODES «PHIN — T -0 Z - I7 Glass-passivated, high-efficiency epitaxial rectifier diodes in SOT-186 full-pack envelopes, featuring

BYW29-200

Abstract: BYW29F-200 BYW29FP-200 BYW29G-200 ISOWATT220AC BYW29-20
Contextual Info: BYW29/F/FP/G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 200 V trr (max) 25 ns VF (max) 0.85 V A K K A FEATURES AND BENEFITS Very Low Forward Losses Negligible switching losses High surge current capability Insulated

byw 150

Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series

BYW29

Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401
Contextual Info: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching