UES1401 Search Results

BYW29

Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401
Contextual Info: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching

BYW29

Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Contextual Info: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.

UES1503

Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402
Contextual Info: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @

DYW29-150

Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
Contextual Info: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150

UES1404

Abstract: UES1401 UES1402 UES1403
Contextual Info: UES1401 - UES1404 8 Amp Ultra Fast Rectifiers — C Dim. Inches Millimeter Minimum — B A B C D E F G H J K L M N P Base Cathode ? •it-M .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Maximum Minimum .415 .0 5 5

BYW29-150 diode

Abstract: BVW29-50 BYW29 BYW29-150 BYW29-200 BYW29-100 byw80 bvw29 BYW80-100 BYW80-150
Contextual Info: RECTIFIERS UES1401 UES1402 UES1403 UES1404 High Efficiency, 7 A and 8A FEATURES • Very Low Forward Vottage • Very Fast Recovery Times • Economical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization

TL 2272 R

Abstract: to220 5 lead plastic UFN610 m7 rectifier diode
Contextual Info: UNITRODE T2 CORP 9347963 U N I T R O O E CORP mT| 92D 0010720 10720 1 D - ?*?-< POWER MOSFET TRANSISTORS Hffilîi 200 Volt, 1.5 Ohm N-Channel UFN 612 UFN613 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

UFN742

Abstract: N-Channel mosfet 400v to220 2314Y UFN741
Contextual Info: TS UNITRODE CORP 9347963 ë F | ‘i 3 M 7 cib3 DGlG7t.a b U N I T R O D E CORP 92D 10762 |~~ D T-" ^ ? V 3 POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

UFN633

Abstract: UFN630 CIT-20
Contextual Info: U N ITR O PE T S CORP 9347963 D EE UN I T R O D E CORP |^ B 4 7 ^ b 3 T o iQ 7 3 ? T T 92D Q 10732 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FE A T U R E S • Com pact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

Contextual Info: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low

d773

Abstract: diode sy 710 sy 710 diode
Contextual Info: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

1G747

Contextual Info: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

1N5807

Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

BYW80

Abstract: BYW80-150 BYW80-50 BYW80-100 UES1401 UES1402 UES1403 ES1401
Contextual Info: BYW80-50 BYW80-100 BYW80-150 RECTIFIERS High Efficiency, 7A and 8A U ES 1401 U ES 1402 UES1403 DESCRIPTION T h e B Y W 8 0 /U E S 1 4 0 0 Series, in a pla stic package s im ila r to th e TO-220, is s p e cific a lly desig n ed for operation in pow er sw itching

USD935-50

Contextual Info: UNITRODE CORP | 9347963 UN I TR OD E □□IGTflb b | 92D CORP 10986 RECTIFIERS D ^ES5501 SES5502 SES5503 SES5504 High Efficiency, 16A F EATU RES • Very Low Forward Voltage • Very Fast Recovery T im es • Econom ical, C onvenient T 0 -2 2 0 Package • Low T herm al Resistance

Contextual Info: UNITRODE T5 CORP 9347963 U N IT R O D E DeT | ^347^^3 0011DL.7 4 | 92D CORP 11067 D r '^ulD620 POWER SCHOTTKY RECTIFIERS USD635 USD640 USD645 12A Pk, up to 45V DESC R IPT IO N The U S D 6 0 0 series of S chottky power rectifiers Is ideally suited for output

USD945

Abstract: TO-220 3 lead bend
Contextual Info: UNITRO DE CORP 9347963 ~ " ~ “iS • D E | ^3*47^3 0011D77 92D U N I T R O D E CORP POWER SCHOTTKY RECTIFIERS 32A Pk, up to 45V 11077 T - O S -t Ü 5 d 920 U SD935 U SD940 USD945 DESCRIPTION FEATURES • Very Low Forward Voltage 0.5V max @ 16A • Reverse Transient Capability

UES1422

Abstract: UES1420 UES1421 UES1423
Contextual Info: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance

ufn730

Abstract: UFN731
Contextual Info: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.