UES1301 Search Results

Contextual Info: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

BKC Semiconductors

Abstract: UES1303 UES1301 UES1302 DSAIH000251
Contextual Info: 5 Amp Voidless Fast Switching Rectifiers UES1301 thru LI UES1303 V- Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. A fast high power, high voltage rectifier for industrial use with military reliability These parts are at home equally in satellite or heavy industrial power supplies

Contextual Info: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • • • • An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are

UES1301

Abstract: UES1302 UES1303 FSM 12.5 BKC Semiconductors
Contextual Info: 6 Amp Voidless Fast Applications Switching Rectifiers UES1301 thru UES1303 Hard Glass Tungsten For use in hostile environments such as military and aerospace. high power rectifier for i^u stifal use with military reliability, •■piiese parts ai« attiortia e^uaS^ Ih S a M te or heavy in^ystrial p^wer supplies.

ec66

Abstract: 100-C UES1301 UES1302 UES1303 ec-66 ues1301-1303
Contextual Info: RECTIFIERS UES1301-UES1303 High Efficiency, 6A DESCRIPTION Now power rectifiers in axial leaded package to meet the most demanding switching applications. An industrial product with military reliability. FEATURES • Very Low Forward Voltage • Very Fast Recovery Times

Contextual Info: DIGITRON SEMICONDUCTORS UES1301-UES1303 HIGH EFFICIENCY RECTIFIERS 3.5 AMP MAXIMUM RATINGS Characteristics Symbol UES1301 UES1302 UES1303 Peak inverse voltage VR 50V 100V 150V Maximum average DC output at TL = 75°C, L = ⅜” IO 6.0A Non-repetitive surge current at 8.3ms

Contextual Info: UES1301 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current6.0 V(RRM)(V) Rep.Pk.Rev. Voltage50 t(rr) Max.(s) Rev.Rec. Time30n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage925m @I(FM) (A) (Test Condition)6.0

UES1303

Abstract: UESI301 6A, 100v fast recovery diode
Contextual Info: RECTIFIERS UES1301 BYV28-50 UES1302 BYV28-100 LIES1303 BYV28-150 High Efficiency, 3.5A DESCRIPTION An axial leaded power rectifier useful in many switching applications. Particularly suited where very fast recovery and low forward voltage are required. FEATURES

6A, 100v fast recovery diode

Abstract: UES1303 byv28 UES1300 BYV28-50 100-C BYV28-100 BYV28-150 UES1301 UES1302
Contextual Info: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in m any sw itching applications. Particu larly suited where very fast recovery and low forward voltage are

byv28

Abstract: BYV28-50
Contextual Info: RECTIFIERS UES1301 BYV28-50 U ES1302 BYV28-100 UES1303 BYV28-150 High Efficiency, 3.5A FEATURES DESCRIPTION • Very Fast Recovery Times • Very Low Forward Voltage • Small Size • Convenient Package An axial leaded power rectifier useful in many switching applications.

Contextual Info: SURFACE MOUNT RECTIFIERS UES1301SM UES1302SM UES1303SM High Efficiency, 8A FEATURES DESCRIPTION • Small Convenient Surface Mount Package The UES1301SM series are power rectifiers in reliable hermetic surface mount packages designed to meet the most demanding switching applications when reducing

Contextual Info: UES1301 BYV28-50 UES1302 BYV28-100 UES1303 BYV28-150 RECTIFIERS High Efficiency, 3.5A FEATU RES DESCRIPTION • • • • An axial leaded power rectifier useful in m any sw itching applications. Particu larly suited where very fast recovery and low forward voltage are

BKC Semiconductors

Contextual Info: 6 Amp Voidless Fast Applications Switching Rectifiers UES1301 thru UES1303 Hard Glass Tungsten For use in hostile environments such as military and aerospace. A fast high power rectifier for industrial use with military reliability. These parts are at home equally in satellite or heavy industrial power supplies.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

1N5811

Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

1N5807

Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Contextual Info: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

CTX12SL

Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Contextual Info: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4