LB53T31 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE = TOD D 0800160 AMPEREX, 90D 10652 D • ^ 5 3 1 3 1 OOlQbSS S SLATERSVILLE t-03-M PHSD51 JV SCHOTTKY-BARRIEB RECTIFIER DIODE High-efficiency rectifier diode in a DO—5 metal envelope, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. It is intended for use in low

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

Contextual Info: D EVELO PM EN T DATA L b S a ^ l aoiatas m 5 B U P22B F B U P 2 2C F This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T - 33 - 0 ? S IL IC O N D IFFU S E D P O W E R T R A N S IS T O R S

Contextual Info: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA

G022

Abstract: M1239 ALPS 102 alps 103 b BYV30 BYV30-400U
Contextual Info: N AUER PHILIPS/DISCRETE 2SE D • 1^53*131 0022S37 T ■ BYV30 SEHItS 7 ^ 0 3 - /7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO— 4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery characteristic.

42t SOT23

Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40
Contextual Info: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.