BYR30 Search Results

Contextual Info: N AMER PHILIPS/ DISCRE TE 2SE D 1^53131 002244S 5 BYR30 SERIES T -Q 1 -I7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

ALP-51

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: N AMER PHILIPS/DISCRETE SSE J> t.bS3T31 0022445 S • BYR30 SERIES 7 = 0 3 -/7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes:, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

bvr3

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: SbE 711DÛEL D DOmSSD 7T7 MPHIN BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES *7 Glass-passivated, high-efftciency epitaxial rectifie r diodes in DO-4 metal envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

BYR30-500

Abstract: diodes sy 360
Contextual Info: AMER P H I L I P S / D I S C R E T E SSE D • t.t.S3T31 0 0 5 5 4 4 5 S ■ BYR30 SERIES _ J [ T -Q 3 - 7 ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low

t031

Abstract: M1246 byr30 BYR30-500 BYR30-600 BYR30-600U T-031 GG41 M3078 M1245
Contextual Info: 711002b DD4155G 7T7 « P H I N ‘ 5bE D BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES '' l 7 Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

BYR30-500

Contextual Info: BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery characteristic. They are intended fo r use in switched-mode power supplies and high-frequency circuits

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

m3181

Abstract: 3045Pt 3040PT PBYR3035PT PBYR3040PT 076-AA PBYR3045PT R2M* Avalanche Diode
Contextual Info: BYR3035PT BYR3040PT BYR3045PT PHILIPS INTERNATIONAL 5bE D 711005b DDmTTH 7bG • P H I N 't-û 3 -tr SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended fo r use in switched-mode

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI