BSR17 Search Results

1N916

Abstract: BSR17A
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

BSR175

Abstract: bsr177 BSR174 BSR176 BSJ174 IEC134 SOT-23 MARKING T31
Contextual Info: DEVELOPM ENT DATA N AnER PHILIPS/1 ISCRETE . ObE D • bb53131 OOlEflflM 3 This data sheet contains advance Information and I | BSR174 tO 177 r- — - * * - specifications are subject to.change without notice. r -

1521 n-p-n

Abstract: BSR17A IEC134 BSR17A equivalent
Contextual Info: • bbS3T31 N AMER 0025577 7 50 H A P X PHILIPS/DISCRETE b7E BSR17A D _y v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon tran sisto r in a m ic ro m in ia tu re plastic envelope intended fo r sw itching and linear applii tio n s in th ic k and th in -film circuits.

BSR17A

Abstract: BSR18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of 1997 Jun 02 2004 Mar 24 Philips Semiconductors Product specification NPN switching transistor BSR17A FEATURES PINNING • Low current max. 100 mA

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking

BP317

Abstract: BSR17A BSR18A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BSR17A NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 02 Philips Semiconductors Product specification NPN switching transistor

tl2222a

Abstract: 2N5381 A5T3904 2sc2720 GG20N 2n3688 mmt3904 sot23 80ng MM3904 BF252
Contextual Info: RF LOW•POWER SILICON NPN Item Number Part Number V BR CEO 5 10 UPI2222B PN3947 PN3947 PN3947 BSX32 2N6375 BSR17R 5MBT3904 SOR3904 (A) P2N2222A ~t~~~2A 15 20 25 30 S03904 TL2222A TMPT3904 BSS67 BSS67R TP5381 A5T3904 EN3904 EN3_904 MMBT3904 MMT3904 MM3904 MM3904

1N916

Abstract: BSR17A MARK U92
Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

Contextual Info: BSR17A _ SILICON PLANAR EPITAXIAL TRANSISTORS N-PTM silicon transistor in a m icro m in ia tu re plastic package intended fo r sw itching and linear applica tions in th ic k and th in -film circuits. Q U IC K R EF E R E N C E D A T A Collector-base voltage open e m itte r

Contextual Info: BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter

BSR17A

Abstract: MARKING G43
Contextual Info: 7 1 1 0 0 2 b □ D b tì S 43 334 « P H I N BSR17A J v_ SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a m icrom iniature plastic envelope intended fo r switching and linear applica­ tions in th ick and th in -film circuits. Q UICK REFERENCE D A T A

J102 transistor

Contextual Info: SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2 . 8“ 0.14 0.48 -npio§ 038 0.70 0.50 3 Pin configuration 1 » BASE 2 = EMITTER 3 = COLLECTOR 2.6 1.4 1.2 2.4 R0.1 CÖÖ4T

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

marking U92

Abstract: BSR17A
Contextual Info: L BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistor Marking BSR17A = U92 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 0 .1 4 —^ 0.09 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS C ollector-base voltage open emitter

BSR17R

Abstract: BSR17AR BSR17A equivalent BSR17 BSR17A IEC134
Contextual Info: N AMER P H I L I P S / D I S C R E T E OL.E D b b 5 3 cm DQISTSS I T BSR17 BSR17A T - 3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a m icrom iniature plastic envelope intended fo r switching and linear applica­ tions in th ick and th in -film circuits.

MARK U92

Abstract: IC 4164 BSR17A equivalent BSR17A
Contextual Info: BSR17A NPN General Purpose Amplifier C E B SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings

MARK U92

Contextual Info: BSR17A BSR17A C E SOT-23 B Mark: U92 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings*

Contextual Info: BSR17A NPN General Purpose Amplifier C E B SOT-23 MARK: U92 Features This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings

Contextual Info: Transistors IC SMD Type Product specification BSR17A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 40 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BSR17A SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistor Marking BSR17A = U92 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR

smd transistor marking 54

Abstract: NF marking TRANSISTOR SMD BSR17A marking U92 smd marking rs BSR17
Contextual Info: Transistors IC SMD Type NPN Switching Transistors BSR17A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage max. 40 V . +0.1 1.3-0.1 +0.1 2.4-0.1 High current (max. 100 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1

50113G

Abstract: BSR17A dc f 7403
Contextual Info: BSR17A Discrete POWER & Signal Technologies National S e m i c o n d u c t o r " & BSR17A NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Contextual Info: N AMER PHILIPS/DISCRETE DbE D btiSBTBl QDISTSE 1 BSR17 BSR17A -T -3 S - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA

Contextual Info: • bbS3T31 Q025577 730 « A P X N AKER PHILIPS/DISCRETE BSR17A b7E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistor in a microminiature plastic envelope intended for switching and linear applica­ tions in thick and thin-film circuits. QUICK REFERENCE DATA