BB531 Search Results

Contextual Info: b'lE D N AMER PHILIPS/DISCRETE • bb53131 D0277D2 m i BF494 ■ APX V _ J SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

BSR175

Abstract: bsr177 BSR174 BSR176 BSJ174 IEC134 SOT-23 MARKING T31
Contextual Info: DEVELOPM ENT DATA N AnER PHILIPS/1 ISCRETE . ObE D • bb53131 OOlEflflM 3 This data sheet contains advance Information and I | BSR174 tO 177 r- — - * * - specifications are subject to.change without notice. r -

PROTECTION PIN NUMBER OF TDA8361

Abstract: TDA8361 TDA8362 TDA8362 E TDA8362 B ic tda8361 JIS F05 connector Block Diagram of PAL TV receiver TDA8361/N4+equivalent TDA8362 a
Contextual Info: bb53124 00^3721 =107 « S I C 3 Philips Semiconductors Objective specification Integrated PAL and PAL/NTSC TV processors TDA8360; TDA8361 ; TDA8362 FEATURES Additional features GENERAL DESCRIPTION Available in TDA8360, TDA8361 and TDA8362 TDA8360 The TDA8360, TDA8361 and

Contextual Info: •I bb53131 00245^5 *APX N AUER PHILIPS/DISCRETE BCW89 b?E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits. QUICK REFERENCE DATA

Contextual Info: bb53131 Q0SDS00 T E5E D N AMER PHILIPS/DISCRETE B U K 455-400A B U K 455-400B P o w e rM O S tra n s is to r r - j? - , 3 G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

z948

Abstract: BGY46B
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D H bb53131 0Q30234 Tb4 • APX 11 BGY46B U H F POWER AMPLIFIER MODULE UHF broadband amplifier module designed for use in mobile communication equipment operating directly from a 9.6 V electrical supply. The module w ill produce a minimum o f 1.4 W into a 50 i2

BYV22-35

Abstract: m0044 BYV22 35 max3035 BYV22 BYV22-40A RTB 17 D-10587 BYV22-30
Contextual Info: N AMER^PHILIPS/DISCRETE TOD D • bb53131 GOlDSflM 3 BYV22 SERIES J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

AI mm sot 553

Abstract: BF620 BF621 BF622 BF623
Contextual Info: • bb53131 QDEMbEj? ÖTS H A P X N AMER PHILIPS/DISCRETE BF621 BF623 b?E » y v SILICON EPITAXIAL TRANSISTORS • F or video o u tp u t stages P-N-P transistors in a m icro m in ia tu re plastic envelope intended fo r app lica tio n in class-B video o u tp u t

D8741

Abstract: BGY41B BGY41A BGY40A BGY40B BGY41 p8748 IEC134 D8746 PHILIPS RF 1980
Contextual Info: N AMER PHILIPS/DISCRETE I 8 6D 01014 ObE D bb531 31 V T - w - ò q - o r _ DG13SS5 BGY40A BGY41A J BGY40B BGY41B U.H.F. POWER AMPLIFIER MODULES A range of broadband u.h.f. modules, primarily designed for mobile communication equipment, operating directly from 12 V electrical systems.

1N963B

Abstract: 1N973B 1N958B 1N957B 1N959B 1N960B 1N961B 1N962B 1N964B
Contextual Info: I 25E D N AMER PHILIPS/DISCRETE • bb531-31‘ 001737Q fi ■ , " 1N957B to 1N973B 400 mW ZENER DIODES Silicon planar diodes in D O -35 packages intended fo r use as low power voltage stabilizers or voltage references. T he series consists o f 17 types w ith nominal working voltages ranging from 6.8 to 33 V .

S089

Abstract: Transistor s44 BCV29 BCV49
Contextual Info: • bb5313]> D0E45M1 bOÔ B A P X N AMER PHILIPS/DISCRETE BCV29 BCV49 b7E D SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal d a rlin g to n transistors, housed in a m icro m in ia tu re envelope S 0 8 9 . PNP co m p le m e nta ry types are B C V 2 8 /4 8 .

HORIZONTAL DRIVER TRANSISTOR

Abstract: Philips ECG flyback
Contextual Info: 17E PHILIPS È C G INC ECG D • bb531Sa OGOSOÜT S ■ 7 ^ 7 7 -0 7 ^ ECG852 No Hold Control, Vert/Horiz Circuit Sem iconductors Features • No frequency setup required for horizontal or vertical 14 13 12 11 10 9 8 ~~T ,280" 7.ll M AX. • Ceramic resonator frequency reference

flj181

Contextual Info: PHILIPS E C G INC 17E Q • bb531Sfl ODDMbST b T -7 4 -Û 5 -0 1 ECG Semiconductors ECG1195 Audio Amplifer t - - Features • Lo w noise, especially lo w pulslve noise • H ig h gain: A v o = 7 9 d B typ .768 I9.5 -H MAX. / .264" (6.7) MAX. * ar

Contextual Info: I N AMER PH ILIPS/D ISCR ETE DEVELOPMENT DATA TDD • D 90D bb53131 OOlOSEb T ■ 10226 D BYP59 SERIES This data sheet contains advance in form atio n and specifications are subject to change w ith o u t notice. J ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE

68c DIODE

Contextual Info: N AtlER PHILIPS/DISCRETE [i bb53131 QQEODQ6 A • BDX68; 68A BDX68B; 68C E5E D J V r- 33-31 DARLINGTON POWER TRANSISTORS P-N-P Darlingtons for audio output stages and general amplifier and switching applications. In a TO-3 envelope. N-P-N complements are BDX69, BDX69A, BDX69B and BDX69C.

Contextual Info: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base

Contextual Info: PowerMOS transistor_BUZ90_ N AMER PHILIPS/DISCRETE OLE D • bb53131 0Q14S51 T ■ T -3 < p ii May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE ObE D bb53131 DDlSDfll 2 PKB3003U T - 3S - O 1 ? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

QD144

Contextual Info: PowerM OS transistor_ _ BU Z76A _ N AMER PHILIPS/DISCRETE ObE D U bb53131 001M4ab 1 • r - ^ r - n May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BW TV Tuner

Abstract: 4700PF ECG866
Contextual Info: PHILIPS E C G 17E INC Q> • 'bb531Efl DQOSOlaH 2 ECG866 S e m ic o n d u c to rs T -7 7 -0 7 -0 5 T V Tuner Frequency Synthesizer NM OS F e a tu re s • P ro g ra m m a b le d iv id e r • S h if t re g is te r/la tc h • A F C m o d e c o n tro l I

f763

Abstract: BF763
Contextual Info: Philips Semiconductors bb53131 0 D3 1 ID 5 1 7 T M l APy Product specification NPN 2 GHz wideband transistor S BF763 N AMER PHILIPS/DISCRETE DESCRIPTION fc.'iE D PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is primarily intended for use in RF