FCJB53T31 Search Results

Contextual Info: ESE D N AMER PHILIPS/DISCRETE • bb53131 ODEO4bO S B U K 454-400A B U K 454-400B P o w e rM O S tra n s is to r r - 3 ? - n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

choke marking nb 03

Abstract: SOT121 Package BLF246
Contextual Info: Philips Semiconductors a tiS 3 R 3 1 0 0 5 TRÔD 536 APX Product specification VHF power MOS transistor BLF246 b'ìE i> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

BFQ253A

Abstract: BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors b b £ 3 R 3 ]i G D 3 1 7 D ti EGO NPN 1 GHz video transistors M l APX Product specification BFQ233; BFQ233A "• N AMER PHILIPS/DISCRETE DESCRIPTION blE D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a