BFQ253 Search Results

philips bfq

Abstract: BFQ253A BFQ233 BFQ233A BFQ253
Contextual Info: Philips Semiconductors bb.53131 003173b 23T IB A P X PNP 1 GHz video transistor Product specification BFQ253; BFQ253A N AMER PHILIPS/DISCRETE DESCRIPTION b'lE D • PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

Contextual Info: Philips Semiconductors bb 5 3 131 0 0 3 1 7 3 b E 3T • PNP 1 GHz video transistor APX Product specification BFQ253; BFQ253A N AUER PHILIPS/DISCRETE DESCRIPTION b'lE » ■ PINNING PNP silicon epitaxial transistor In a SOT5 TO-39 envelope with emitter-ballasting resistors and a

GHz PNP transistor

Abstract: BFQ253 mb8833 Philips MBB BFQ233 BFQ233A BFQ253A
Contextual Info: Philips Semiconductors — 33 PNP 1 GHz video transistor PHILIPS INTERNATIONAL D E S C R IP T IO N Product specification - / ^ ' BFQ253; BFQ253A 5bE 7110flEb D[]i45b2S Ö3M IPHIN P IN N IN G P N P silicon epitaxial transistor in a S O T 5 T O -3 9 envelope with

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A

BFQ233

Abstract: BFQ253
Contextual Info: Philips Components B FQ 233 JV NPN HIGH F R E Q U E N C Y H IG H V O L T A G E T R A N S IS T O R NPN silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

BLY32

Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors

BF547A

Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS

BFQ233

Abstract: BFQ253A BFQ233A BFQ253
Contextual Info: Product specification Philips Sem iconductors NPN 1 GHz video transistors PHILIPS INTERNATIONAL DESCRIPTION BFQ233; BFQ233A SbE I> m 7110flSb 00455^0 Tûb • PHIN PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

sot37

Abstract: sot-37 T173 RE SOT
Contextual Info: Small Signal Leaded Devices W ideband Transistors c o n t. hFE Ratings Type v CEO V v CBO V *c mA TO-39 TO-72 SOT-37 SOT-37 SOT-37 TO-72 25 10 15 15 10 15 40 20 25 25 18 30 150 50 25 25 50 25 SOT-103 SOT-37 SO T-173 TO-72 SOT-37 SO T-173 TO-72 SOT-37 SOT-37

1Ft TRANSISTOR

Abstract: properties of transistor pnp transistor 1FT BFQ233 BFQ253 ccb transistor
Contextual Info: Philips Components _ A PNP HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP silicon epitaxial transistor w ith emitter ballasting resistors and a gold sandwich metallization to ensure optimum temperature profile and excellent reliability properties. It features high break-down

Contextual Info: Philips Semiconductors M bb.53^31 ODBITD1! 200 • A P X ^Productspecificatlon NPN 1 GHz video transistors BFQ233; BFQ233A 1 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with emitter-ballasting resistors and a

128-B

Abstract: SOT128B bfq162
Contextual Info: 58 RF/Microwave Devices Video Transistors Characteristics Ratings Typo No. Pkg. •Vcbo max V ■VCEO max (V) max (mA) hFB min T, CCB max (pF> (°C) fr min (MHz) NPN BFQ161 BFQ162 BFQ163 BFQ166 BFQ231 BFQ231A BFQ232 BFQ232A BFQ233 BFQ233A BFQ234 BFQ235 BFQ235A