BD228 Search Results

BD230

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BD228

Abstract: BD226 BD230 BD227 BD229 BD231 Power Transistors TO-126 heatsink
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD226; BD228; BD230 NPN power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 06 Philips Semiconductors Product specification NPN power transistors

BD231

Abstract: Bh23 BD227 BD226 BD229 transistor BD 137 Transistors bd 133 BD228 BD230 C 1972 transistor
Contextual Info: BD227 BD229 BD231 I P H IL IP S IN T E R N IS T SbE , H ïp H I N T '3 3 - ir SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

BD230

Abstract: lm 383 ic
Contextual Info: BD226 BD228 BD230 SILICON PLANAR EPITAXIAL POWER TRANSISTORS G e n e r a l p u r p o s e n - p - n t r a n s i s t o r s in a S O T - 3 2 p l a s t i c p a c k a g e e s p e c i a l l y r e c o m m e n d e d f o r t e l e v i s i o n c i r c u i t s . T h e i r c o m p l e m e n t s a r e B D 2 2 7 , B D 2 2 9 and B D 2 3 1 .

Contextual Info: BD226 BD228 BD230 _ J V SILICON PLANAR EPITAXIAL POWER TRANSISTORS G eneral purpose n -p -n tra n s is to rs in a SOT-32 plastic envelope especially recommended for television c irc u its. T h eir complements a re BD227, BD229 and BD231.

Contextual Info: BD227 BD229 BD231 J K . SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, BD228 and BD230.

BD228

Abstract: C 1972 transistor BD230 BD226 BD226-BD227 BD227 BD229 BD231 BD230-BD231 BD228-BD229
Contextual Info: BD226 BD228 BD230 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose n-p-n transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD227, BD229 and BD231. QUICK REFERENCE DATA BD226 BD228 BD230

BD226

Abstract: T-33-07 C 1972 transistor BD227 BD228 BD230 BD229 BD231 3307 jnib
Contextual Info: _ PHILI P S I N T E R N A T I O N A L BD226 BD228 BD230 J m SbE ]> 711DflEti 004EA314 ^37 • P H I N SILICON PLANAR EPITAXIAL POWER TRANSISTORS T~ 3 3 - 0 7 G en eral purpose n -p-n tra n sisto r s in a SOT-32 p lastic envelope esp ecially recom m ended

BD223

Abstract: bd230 bd226
Contextual Info: Philips Semiconductors Product specification NPN power transistors BD226; BD228; BD230 FEATURES PINNING • High current max. 1.5 A PIN • Low voltage (max. 80 V). 1 em itter 2 collector, connected to m etal part of m ounting surface 3 base DESCRIPTION

philips blx15

Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Contextual Info: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

transistor itt 975

Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz

Philips Application Note ECO6907

Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

sec tip41c

Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power