BC 206 TRANSISTOR Search Results

bc204

Abstract: BC205 transistor BC205 BC206 bc 204 BC 205 BC 450 pnp bc silicon
Contextual Info: BC 204 BC 205 BC 206 S I L I C O N P L A N A R PNP GENERAL PURPOSE AMPLIFIERS The BC204, BC 205 and BC 206 are silico n planar epitaxial PNP transistors in T O -18 epoxy package. They are intended fo r general am p lifie r ap plicatio ns and TV signal processing.

bc 207 npn

Abstract: BC209 bc audio transistors bc 209 BC116A BC low noise BC377 audio pnp
Contextual Info: CONSUMER TRANSISTORS CD U > X CO E_ c E LÜ u_ .c < _E _u @ > J < E ra _u LÜ O > o 1< oc e >< CD E ÜJ u. o LT> CNJ X CB E _o II IO h@ 5 _E Ü Q- 45 80/240 150 400 150 0.1-150 _ 500 50 60 typ 150 200 150 1-500 - 500 General purpose c j < J PACKAGE ì> > lc RANGE mA

bc 540

Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

J03 SOT23

Abstract: BC 327 SOT 23 SO2894 2907 21E sot MARK T5 sot A2N transistor 2907 pnp transistor BC178A SO2906R
Contextual Info: A C T IV E COMPONENTS FO R H Y B R ID C IR C U ITS COMPOSANTS A C T IF S POUR C IR C U ITS H Y B R ID E S ë CB-166 SOT-23 Silicon PNP transistors, switching and general purpose , Mark ing Marq uage Type T ype N R * Pin co nf. Brochage Transistors PNP silicium usage général et commutation

Contextual Info: 3SE D • äS3b320 QQlbbBl 3 « S I P PNP Silicon AF Transistors f - 4 1 - 17 SIEMENS/ SPCLi SEMICONDS • • • • • B a a a BC 856 -BC860 For AF input stages and driver applications High current gain Low collector-em itter saturation voltage Low noise between 30 Hz and 15 kHz

bc 212 equivalent

Abstract: MARKING CODE 21E SOT323
Contextual Info: SIEMENS PNP Silicon AF Transistors BC 856W . BC 860W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W,

bc 212 equivalent

Abstract: siemens CIB
Contextual Info: PNP Silicon AF Transistors • • • • • For AF input stages and driver applications High cu rre n t gain Low c o lle c to r-e m itte r saturation voltage Lo w noise betw een 30 Hz and 15 kHz C om plem entary typ e s: BC 846, BC 847, BC 849, BC 850 NPN

BC 641

Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Contextual Info: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76

transistor bc 237c

Abstract: transistor 206 BC 205 TRANSISTOR NPN bc 206 transistor bu205 BU206 AS 205 transistor bf 204 115 TRANSISTOR BC 206
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • iH E O O 'lb GOGTMM? IAL66 T BU 204 • BU 205 • bU ¿u6 TnmiPttSMKOlN] electronic Creitiv* ”ftehnOtoaiM r-2 3 ~ 0 7 Silicon NPN Power Transistors Applications; Horizontal deflection circuits in black and white TV-receivers

BCX59

Abstract: LODA transistor bc 207 npn BCX58 BCX59VII C620 C623 C624 Q62702
Contextual Info: BCX58, BCX59 NPN Transistors for AF, pre- and driver stages as w ell as switching applications BCX 58 and BCX 59 are epitaxial NPN silicon planar transistors in a plastic package strip-line design 10 A 3 DIN 41868 (sim. SOT-30). The transistors are designed for

BCX58

Abstract: C621 c619 bcx 58 k C618 MC908Q1CP Q62701
Contextual Info: IMP N -Transistoren fü r l\IF -V o r- und T reib erstu fen sow ie S chalteran w en dungen BCX 58 BCX 59 BCX 58 und BCX 59 sind epitaktische NPN-Silizium-Planar-Transistoren im Kunststoffgehäuse 10 A3 DIN 41 868 ähnl. S O T -3 0 . DieTransistorensindfürden Einsatz in NF-Vor- und Treiber­

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

2sc 9015

Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K

BC876

Abstract: c878 BC880
Contextual Info: BC876 BC878 BC880 SMALL-SIGNAL DARLINGTON TRANSISTORS PNP e p itaxia l small-signal D a rlin g to n transistors, each in a plastic TO -92 package w ith an integrated diode and resistor. T he y can be used fo r general purpose low frequency applications and as relay drivers etc.

service-mitteilungen

Abstract: servicemitteilungen VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN magdeburg BC149C GER-A Service Mitteilungen 4 WG 130 "service-mitteilungen" scans-048
Contextual Info: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN r a d i o -television NEUE AUSGABE: 10/73 DATUM: August 1973 I M P O R T - G E R Ä T E " VEF 206 " - ein Kofferempfänger mit 8 Wellenbereichen aus der SU Der Kofferempfänger "VEF 206" emp­

transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G

transistor BC-108

Abstract: dog 53 DIODE BZ TRANSISTOR BC 109 VEB Kombinat DIODE BZP DIODE BZp 6870 service-mitteilungen Stern Radio OA625
Contextual Info: SERV IC E-M ITT EILU N G EN VEB IN DUSTRIEVERTRIEB RU ND FU NK UND FE RN SE H EN GSMi ra d io - television AUSGABE: 7/73 DATUM: Juni 1973 Neue Import - Geräte Kassetten-Tonbandgerät " M£ - 25 " Dae Gerät wird aus der VR Ungarn importiert und befindet sich ab

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

2sd 5023

Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

transistor bc 209 npn

Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Contextual Info: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

TRANSISTOR BC 206 PNP

Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Contextual Info: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V