BC177B Search Results

Contextual Info: BC177B Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)200m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.180 h(FE) Max. Current gain.

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

BC177B

Contextual Info: BC177B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BC177B

Abstract: BC177 BC107 BC107B 45OL
Contextual Info: BC177 BC177B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 and BC177B are silicon Planar Epitaxial PNP transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits

BC177B

Contextual Info: BC177B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

BC177B

Abstract: BC177 transistor BC177 BC177 NPN transistor datasheet BC177 pnp transistor DATASHEET Transistor BC107 of BC107 BC107 characteristic BC107 equivalent bc177 datasheet
Contextual Info: BC177 BC177B LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS DESCRIPTION The BC177 and BC177B are silicon Planar Epitaxial PNP transistors in TO-18 metal case. They are suitable for use in driver stages, low noise input stages and signal processing circuits

Contextual Info: BC177B Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.1A All Semelab hermetically sealed products

Contextual Info: TO-18 Metal-Can Package Transistors PNP Electrical Characteristics (Ta=25'C, U n le ss Otherwise Specified) M axim um Ratings Type No. BC177A ^CBO V CEO V EBO PD (V) Min (V) Min (V) Min (W) @Tc=25°c 50 45 5 50 BC177B 45 5 0.6 0.6 'c (A) 'c m *CBO V C8 ^CE5

BC177 pin configuration

Abstract: BC177B BC177 BC177 pnp transistor
Contextual Info: BC177/BC177B Series Low Power Bipolar Transistors Feature: • PNP Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions Minimum Maximum A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

ESG456

Abstract: BC109C NPN C17S Transistor BC177 TO18 ir diode oerlikon BC107A BC107B ESG 456 BC109
Contextual Info: / A] VANI OERLIKON/ SEÏIICONJ) 3bE DSblbMfi DDODGDT fi H S E L I D -oi-ol SILICON DIODES - “¿ 7 - 0 \ T f - o i/o<y h) Trigger devices Pd Ta=25«C TYPE - ESG 4 5 6 • ESG 4 5 7 ESG 4 5 8 Von I f (P e a k ) mA mW 200 200 200 SEMICONDUCTOR* If Vt (Trigger Voltage)

Contextual Info: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

bc177

Contextual Info: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BC177 NPN transistor

Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
Contextual Info: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3

BC107 to92

Abstract: equivalent for BC337 NPN general purpose transistor BC337 BC327 NPN transistor datasheet bc337 transistor datasheet 2N4126 bc548 2N4124 bc548 Transistor BC177 transistor BC337-16 DATASHEET Transistor BC107
Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued PNP GENERAL PURPOSE LOW-POWER TRANSISTORS TYPE NUMBER PACKAGE VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) 250 2N4124 NPN COMPL. PAGE 2N4126

BD119

Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Contextual Info: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17

BC177, BC178, BC179

Abstract: BC179 BC178 BC118 BC177 BC111 BC7f tranzystor BC107 BC108
Contextual Info: 4 - 74/2 T R A N Z Y S T O R Y p-n-p * BC177, BC178 i BC179 SWW 1156-211 T ra n z y sto ry k rz em o w e e p ip la n a rn e m ale j m ocy m alej czçstotliw osci. T ra n z y sto ry BC177 i BC178 p rzeznaczone do stosow an ia w p rz ed w z m ac n iac za ch m ale j czçsto tliw o sci i sto p n iac h ste ru j^ cy c h .