SPB17N80C3 Search Results
SPB17N80C3 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SPB17N80C3 | Infineon Technologies | N-Channel MOSFETs (>500V - 900V); Package: PG-TO263-3; VDS (max): 800.0 V; Package: D2PAK (TO-263); RDS(ON) @ TJ=25°C VGS=10: 290.0 mOhm; ID(max) @ TC=25°C: 17.0 A; IDpuls (max): 51.0 A; | Original | 325.12KB | 10 | ||
| SPB17N80C3 | Infineon Technologies | Cool MOS Power Transistor | Original | 337.97KB | 13 | ||
| SPB17N80C3 | Infineon Technologies | CoolMOS Power MOSFET, 800 V, D2PAK, RDSon=0.29 ?, 17.0A | Original | 572.42KB | 11 | ||
| SPB17N80C3ATMA1 | Infineon Technologies | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 17A D2PAK | Original | 429.51KB |
SPB17N80C3 Price and Stock
Infineon Technologies AG SPB17N80C3Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3 |
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SPB17N80C3 | 125 | 1 |
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SPB17N80C3 | 3,000 | 16 |
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SPB17N80C3 | 1,863 |
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SPB17N80C3 | 2,400 |
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SPB17N80C3 | 406 |
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Infineon Technologies AG SPB17N80C3ATMA1Transistor: N-MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPB17N80C3ATMA1 | 1,000 |
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SPB17N80C3ATMA1 | 4,000 | 1,000 |
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| SPB17N80C3ATMA1 | 2,000 | 1 |
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| SPB17N80C3ATMA1 | 36 | 4 |
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SPB17N80C3ATMA1 | Tape & Reel | 14,000 | 12 Weeks | 1,000 |
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SPB17N80C3ATMA1 | 1,450 |
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SPB17N80C3ATMA1 | 4,000 | 12 Weeks | 1,000 |
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| SPB17N80C3ATMA1 | Cut Strips | 2,000 | 8 Weeks | 1 |
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| SPB17N80C3ATMA1 | Cut Strips | 36 | 12 Weeks | 1 |
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SPB17N80C3ATMA1 | Tape & Reel | 2,000 | 1,000 |
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| SPB17N80C3ATMA1 | Tape & Reel | 1,736 | 100 |
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| SPB17N80C3ATMA1 | Cut Tape | 1,736 | 1 |
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SPB17N80C3ATMA1 | 38 |
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SPB17N80C3ATMA1 | 4,000 |
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SPB17N80C3ATMA1 | 11,000 | 11 Weeks | 1,000 |
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Infineon Technologies AG SPB17N80C3ATMA1.Pwr Mosfet, N Channel, 800V, 17A; |Infineon Technologies SPB17N80C3ATMA1. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPB17N80C3ATMA1. | Tape & Reel | 1,000 |
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Intersil Corporation SPB17N80C3Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPB17N80C3 | 12 |
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Infineon Technologies AG SPB17N80C3T |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPB17N80C3T | 3,956 |
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SPB17N80C3 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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17N80C3
Abstract: 17n80c 17n80 SPP17N80C3 SPB17N80C3
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spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+4 | |
17n80c3
Abstract: 17n80 spa17n80c3 17N80C SPB17N80C3 UJ14 Q67040-S4441
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spp17n80c3spb17n80c3spa17n80c3p-to-220-3-31+8 | |
MOSFET 17N80c3
Abstract: smd transistor marking d10 17n80c3 17N80C3 mosfet SPB17N80C3 640 smd transistor marking smd G47
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spb17n80c3pg-to26317n80c3mosfet 17n80c3+4 | |
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Contextual Info: SPB17N80C3 CoolMOS Power Transistor Product Summary Features • new revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.29 Ω 91 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications |
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spb17n80c3pg-to26317n80c3 | |
17N80C3
Abstract: SPP17N80C3 17n80 17n80c SPB17N80C3
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spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+4 | |
17n80c3
Abstract: 17n80 Q67040-s4354 17n80c Q67040-S4441 Q67040-S4353 spa17n80c3
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spp17n80c3spb17n80c3spa17n80c3p-to220-3-31+8 | |
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Contextual Info: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance |
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spb17n80c3pg-to263q67040-s435417n80c3 | |
17n80c3Contextual Info: Final data SPP17N80C3, SPB17N80C3 SPA17N80C3 Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω 17 A • Worldwide best RDS(on) in TO 220 • Ultra low gate charge ID • Periodic avalanche rated |
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spp17n80c3spb17n80c3spa17n80c3p-to220-3-31+4 | |
17n80c3Contextual Info: SPP17N80C3 SPB17N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 800 V RDS(on) 0.29 Ω |
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spp17n80c3spb17n80c3p-to263-3-2p-to220-3-1+3 | |
17n80c3
Abstract: 17n80c 17n80 Q67040-S4353 CTJ720 SPA17N80C3 schneider xb5avb3 SPB17N80C3 SPP17N80C3 SPA17
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spp17n80c3spb17n80c3spa17n80c3p-to220-3-31+10 | |
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Contextual Info: SPB17N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.29 Ω ID 17 A • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances |
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spb17n80c3p-to263-3-2q67040-s435417n80c3 | |
MOSFET 17N80c3
Abstract: 17n80 17n80c 17n80c3 SPB17N80C3 smd transistor marking d10 JESD22 smd G47
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spb17n80c3pg-to26317n80c3mosfet 17n80c3+5 | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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igbt welding machine schemeikw40n120h3aircon l1smd diode schottky code marking sj+6 | |
3bs02
Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
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infineo866-95b152-h8926-g2-x-7600nb08-10693bs02+9 | |
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irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
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element-14f155-6af155-10af165-15a+11 | |
IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
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ao4405ao4407ao4408ao4409+16 | |
LTC3890
Abstract: pnp transistor 800V 1A LTC4366-2
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ltc4366-1/ltc4366-2ltc4366lt3850ltc3890+7 | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519b152-h9345-g2-x-7600px3544px7510+8 | |
600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9 | |
ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
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spp21n50c3spa21n50c3spi21n50c3spp16n50c3+16 | |
LTC4365
Abstract: SPB17N80C3 LT3850 LTC4366
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ltc4366-1/ltc4366-2ltc4366lt3850ltc3890+7 | |
BUP213
Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
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o-218abo-220abo-220o-220fp+16 | |
220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
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ad9272p462-ndlng295lfcp2up463-nd+11 | |
BUZ78
Abstract: SIPC69N60C3 P-Channel Depletion Mosfets sipc01n80c2 SPNA2N80C2 buz22 SIPC26N60C3 SIPC26N80C3 BTS443P BTS840S2
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bts308bts409bts410-h2bts640s2+15 | |