MRF429MP
Abstract: MRF429-MP MRF429 MRF-429
Contextual Info: MOTOROLA SEM IC O N D U C T O R MRF429 MRF429MP TECHNICAL DATA The RF Line 150 W LINEAR 30 MHz RF POWER TRANSISTORS N P N SILIC O N NPN SILICON RF POWER TRANSISTORS . . d e s ig n e d p r im a rily fo r h ig h -v o lt a g e a p p lic a t io n s a s a h ig h p o w e r lin e a r a m p lifie r fro m 2.0 to 3 0 M H z . Id e a l fo r m a r in e a n d
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adc 809
Abstract: MRF429 arco 469 1N4997 EQUIVALENT FOR J175 TRANSISTOR j115 Transistor MRF429
Contextual Info: Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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mrf429/dmrf429adc 809arco 469+41n4997equivalent for j175transistor j115transistor mrf429
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Contextual Info: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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2454 transistor
Abstract: MRF429 arco 463 MRF429 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high-voltage applications as a high-power linear amplifier from 2,0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —
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Contextual Info: MOTOROLA Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF429 Designed prim arily for h ig h -vo lta g e applications as a h ig h -p o w e r linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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Contextual Info: MRF429 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)100 I(C) Max. (A)16 Absolute Max. Power Diss. (W)320 Maximum Operating Temp (øC)150þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MRF429
Abstract: MM100V
Contextual Info: MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W PEP
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150 watt hf transistor 12 volt
Abstract: MIL-STD-1311
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF429 The RF Line NPN Silicon RF Power Transistor . . . designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —
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mrf429150 watt hf transistor 12 voltmil-std-1311 |
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arco 469
Abstract: MRF429 1N4997 MRF-429
Contextual Info: MOTOROLA Order this document by MRF429/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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mrf429/dmrf429arco 4691n4997+1mrf-429
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MRF429
Abstract: 30MHZ 150W MRF429 equivalent RF POWER TRANSISTOR 150w
Contextual Info: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
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Contextual Info: MRF429 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF429 is Designed for High voltage applications up tp 30 MHz PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A C E FULL R • PG = 13 dB min. at 150 W/30 MHz • IMD3 = -32 dBc max. at 150 W PEP
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF429 D esigned prim arily for hig h -vo lta g e applications as a h ig h -p o w e r linear am plifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. • Specified 50 Volt, 30 MHz Characteristics —
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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sg379/d1n965brlzen15v1n751as+151n967brlzen18v1n751asrl1n968brlzen20vmc68b21cpxcm916x1cth16transistor marking code 12w sot-23sg379mc68b54pxc68hc805p18cdwmc68b50cpmc2830ne555nchn ne555n
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714u/1mhlw8000mhw707-2mhw707-1+8mrf947t1 equivalentmhw704cr2428mhw591mhw592mhw593mhw707mrf861
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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am1214-100am1214-200am1214-325am80912005+16am80912015am80912030am80912085am80912150am81214006am81214015tp2304tpv3100tp9383tp2330mrf2001pt9783pt9780tp8828fbly93amrf 406 application circuit
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MRF648
Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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dl110/d2a258 transistorfuji electric tv schematic diagramsmd transistor wb3+7vhf fm pll schematic mc145152motorola transistor smd marking codesmark 176 sot363 rfnote ar164, motorola rf device data, volume ii, dtip off 0401 mosfet transistorcordless phone transceiver icsemiconductors cross index
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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jun08smr-3822x-band power transistor 50wsmr-5550+7x-band mmic lnahf multicouplergaas fet amplifier x-band 10wx-band microwave fetsm4t mixerpallet fm amplifier 300 wattsx-band limiter
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filter for GPS spice
Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率
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rf2010567sigejesd204a-dacadcjesd204a-+15aec100bfr90bfq33tff1004hnjesd204ablf578filter for gps spicediode smd marking buf gp 750blf7g10-300pax 2008 lqfp48gp 809 diodebf1118mpal2731m15bgu7051bb 505 varicap diode
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