IRFP451 Search Results

IRFP450

Abstract: IRFP 450 application IRFP451 IRFP450 POWER IRFP452 IRFP453 P452 application IRFP450 IQR 2400 JVM RELAY
Contextual Info: -Standard Power MOSFETs IRFP450, IRFP451, IRFP452, IRFP453 50 75 100 125 T q . C A S E T E M P E R A T U R E °C Fig. 12 — T yp ica l O n-R e sistance V s. D rain C urrent Fig. 13 — M a x im u m D ra in C u rre n t V s. Case Tem perature T E l * 0.5 B V q S S

IRFP 450 application

Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Contextual Info: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5

RFP450

Abstract: IRFP RE 40 IRFP 450 FP450 IRFP450FI
Contextual Info: w SGS-THOMSON N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE W R FP450 IR F P 4 5 0 F I I IR FP 451 IR FP 451 FI . . . IRFP450/FI IRFP451/FI ;LiO T «s V dss R DS on Id 500 V 500 V 0 .4 a 0 .4 i l 14 A 9 A 450 V 450 V 0 .4 £2 0.4 £2 14 A 9 A

Contextual Info: H a r r IRFP450, IRFP451, IRFP452, IRFP453 i s s e m i c o n d u c t o r 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features 12A and 14A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate

IRFP450

Abstract: IRFP451 bonding TO-247 IRFP453 IRFP452
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 H a rris 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP450 inverter

Abstract: D88FR1 IRFP451
Contextual Info: IRFP451,450 D88FR1,R2 FUT HELD EFFECT POWER TRANSISTOR 13 AMPERES 450, 500 VOLTS RPS ON = 0-4 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IREP450

Abstract: irfp450 FP450 DIODE C549 IRFP451 IRFP452 diode c552 C546 A FP453 diode C546
Contextual Info: HE D I 4Û55M5E 00007113 »4 | Data Sheet No. PD-9.458B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* HEXFETTRANSISTORS IM - C H A N N E L I « R IRFP45Q IRFP451 IRFP452 IRFP453 Product Summary 500 Volt, 0.40 Ohm HEXFET

IRFP 450 application

Abstract: transistor irfp IRFP 450 SCHEMATIC WITH IRFP 450 IRFP450F irfp hi power power switching with IRFP450 schematic IRFP453FI irfp
Contextual Info: F Z 7 S G S -T H O M S O N *7Æ» IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI IRFP451 IRFP451FI IRFP452 IRFP452FI IRFP453 IRFP453FI 500 500 450 450 500 500 450 450 V V V V V V V V ^DS<on

IRFP450R

Abstract: IRFP IRFP 450 application IRFP45O IR mosfets IRFP P CHANNEL MOSFET transistor irfp IRFP451R IRFP452R IRFP453R
Contextual Info: Rugged Power MOSFETs File N u m b er 2018 IRFP450R, IRFP451R IRFP452R, IRFP453R Avalanche Energy Raited N-Channel Power MOSFETs 12A and 13A, 450V-500V rDs on = 0.40 and 0.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated ■ SOA is power-dissipation lim ited

IRFP450

Abstract: IRFP452 IRFP451 IRFP453 TA17435 TB334 irfp-450
Contextual Info: IRFP450, IRFP451, IRFP452, IRFP453 S E M I C O N D U C T O R 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 12A and 14A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

IXTP4N50A

Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: • 43D5571 0D5MS3S t.4T gì HARRIS ■ HAS IR FP450/451/452/453 IRFP450R/451R /452R /453R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package TO -247 TOP VIEW • 12A and 14A, 450V - 500V • ro s o n = 0 .4 0 and 0 .5 fi

ISOWATT220

Contextual Info: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30

sgs*P381

Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
Contextual Info: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177

SSH3N70

Abstract: ssh15n55a SSH20N50A SSH8N60 SSH15N60A SSH20N45A ssh20n50 IRFP453 IRFP452 IRFP451
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-3P NCHANNEL Continued BVdss(V) ID(onXA) 400.00 5.00 5.50 8.00 10.00 13.00 15.00 25.00 25.00 1.50 1.00 0.80 0.55 0.40 0.30 0.20 0.25 IRFP332 IRFP330 IRFP342 IRFP340 IRFP352 IRFP350 SSH25N40A SSH25N40 450.00 4.00 4.50 7.00 8.00

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

1rfp450

Abstract: 1rfp460 RFP450 IRFP450R IRFP462 IRF450R IRFP RE 40 IRFR452 MC 4528 IRFP450
Contextual Info: 2 HARRIS IRFP450/451/452/453 IRFP450R/451R/452R/453B N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 4 7 TOP VIEW • 12A and 14A, 450V - 500V • rDs on) = 0 -4 fi and 0 .5 0 • Single Pulse Avalanche Energy Rated* 3 SOURCE

N73M

Contextual Info: N-Channel Power MOSFETs National Semiconductor COOLFETs TM GO m 3: M o >D A °9 (nC) Max C|W (pF) Min Max Com (pF) M in Max C|*a (PF) Min Max 0.24 8 120 3000 600 200 F3 0.25 0^4 8 120 3000 600 200 F3 4 0.25 0.24 8 120 3000 600 200 F3 2 4 0.25 0.32 7 120

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232

Irfp450

Contextual Info: [ ' - 7964142 SAM SUN G S EM IC O N D UCTOR INC D eT | 7 ^ 4 1 4 2 9 8D 0 5 2 2 4 □□□5524 3 | D T ~ 3 i -1 3 N-CHANNEL POWER MOSFETS IRFP450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability