irfae42
Abstract: JRFAE42
Contextual Info: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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mosfet 10a 800v
Abstract: IRFAE40
Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-544-0-1737-2comdb8029cirf460+9smd transistor marking k38smd transistor k38we 751002 ssmd-6ctransistor smd k45rad-hard igbtirf3504afl2805s manufactured by international rectifier550-065
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1RF530
Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)
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1rf522o-220abrf523irf530+12irf630irf631t0-220ab1rf5301rf5401rf520rf543irf532irf533irf541irf542irf543
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IRF470
Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0
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irf331o-204aa/to-3irf3322n6012+13o-247irfp352rirfp353rirf470irfp240rirf840cfirf449irf340airf520 powerirf341rirfp20irf460 to-247irf331r
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2N7334
Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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irhe7110irhe8110irhe7130irhe8130+9irhe7230irhe8230irhe9130irhn7054irhn8054irhn71302n7334irfg9110h24 smd
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1RF9540
Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0
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1RF630
Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)
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ta-2510sd210td-12sd211+15sd212s0213o-220abirf630irf6311rf630irf8101rf5401rf5301rf6201rf740ferranti1rf634rf543irf9613
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SHD2254
Abstract: shD2251
Contextual Info: SENSITRON SEMICONDUCTOR 1995 SHORTFORM CATALOG N-CHANNEL HERMETIC POWER MOSFETS TO-254, TO-257 TYPE NUMBER BVd SS DRAIN TO SOURCE BREAKDOWN VOLTAGE (VOLTS) •d CONTINUOUS DRAIN CURRENT (AMPS) Pd MAXIMUM POWER DISSIPATION (WATTS) h d s (0N) STATIC DRAIN TO
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o-254o-257irf044irf140+875n10irf24050n20irf340irf44024n50shd2254shd2251
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1rf740
Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-
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IRF449
Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452
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irf451t0-204aairf4532n6769+14irf441irf4431rf4312n6761irf433irf421irf4491rf9130irf460irf9243irfag522n6b04irf420irf9141
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irf440
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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RF432
Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Contextual Info: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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1RF640
Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Contextual Info: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)
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1RF530
Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Contextual Info: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40
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Contextual Info: International Government and Space ïO R lR e c t if ie r HEXFET Power MOSFETs Hermetic Package N-Channel Part bvd ss Number V IRF034 IRF044 IRF054 60 60 RDS(on) (Ohms) lD@ T „ = 25°C c (»> 0.500 0.280 25 44 Iq@ TC = 100°C R thJC Max. Pd @ Tq = 25°C
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IRF448
Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452
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irf422irf420irf4322n6762+13irf430irf442irf440irf449irf448irf452irf9243irfag52irfaf30irf460irf9140thomson 58ethomson 58e case outline
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IRFF320
Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numbtr BVDSS 2 (3) (Vdn) R0S(on) (Ohm) N)0 TC-2S* (Amp«} Iq O Tc-IOB* (Amp*) Pq O Tc*2F (Watts) Fax-onDemand Number Case Style, (Case Outline) (1) HEXFET Power MOSFETf Hermetic Package, N- a n d P-Channel
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jantx2n7222ujantxv2n7222ujantx2n7228ujantxv2n7228u+7jans2n7236ujantx2n7236ujantxv2n7236ujans2n7237jantx2n7237ujantxvn7237uirff320
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs
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irf seriesfor driver circuit for mosfet irf240irf350 mosfet driverirf 543 mosfet+6irf460irf 870ak 9aa diodeirf450airf150 complimentalps 83 7n
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